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InAs

Compound Descriptions:

Element System:As-In
Element Names:Arsenic, Indium
Name(s):InAs
Indium arsenide
AsIn
Indium arsenide (InAs)
Indium monoarsenide
Indium monoarsenide (InAs)
CAS-RN:1303-11-3
EINECS:215-115-3 EINECS

European Regulations

4 matching entries in european regulations: Hazard, GHS, REACH, ECHA-pre

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

Electrical Properties

Electronic Properties

Semiconductors

 internal strain, effective charges: Vol. III/41A1A 149III/41A1a
 structure, phase transition parameters: Vol. III/41A1A 187III/41A1a
 sound velocities and attenuation: Vol. III/41A1A 188III/41A1a
 lattice parameters, thermal expansion: Vol. III/41A1A 202III/41A1a
 dielectric constants: Vol. III/41A1A 226III/41A1a
 elastic moduli and compliances: Vol. III/41A1A 238III/41A1a
 phonon dispersion, phonon spectra, phonon wavenumbers: Vol. III/41A1A 25III/41A1a
 piezoelectric parameters, nonlinear susceptibilities: Vol. III/41A1A 253III/41A1a
 data from angle integrated photoemission: Vol. III/41A1A 273III/41A1a
 refractive and absorption index, reflectance: Vol. III/41A1A 276III/41A1a
 Debye temperature, density, hardness, melting point: Vol. III/41A1A 283III/41A1a
 piezoresistance and piezoelectric constants: Vol. III/41A1A 285III/41A1a
 piezooptic constants, piezobirefringence: Vol. III/41A1A 295III/41A1a
 electron g-factor, camel's back structure at conduction band edge: Vol. III/41A1A 313III/41A1a
 energy gap, exciton data: Vol. III/41A1A 315III/41A1a
 valence band parameters: Vol. III/41A1A 332III/41A1a
 phonon dispersion, phonon wavenumbers: Vol. III/41A1A 355III/41A1a
 crystal structure, high pressure phases: Vol. III/41A1A 357III/41A1a
 higher band-band transitions: Vol. III/41A1A 368III/41A1a
 elastic moduli: Vol. III/41A1A 393III/41A1a
 Seebeck coefficient: Vol. III/41A1A 400III/41A1a
 deformation potentials: Vol. III/41A1A 417III/41A1a
 recombination and generation, lifetimes: Vol. III/41A1A 423III/41A1a
 band structure, energies of symmetry points: Vol. III/41A1A 489III/41A1a
 valence band, effective masses: Vol. III/41A1A 520III/41A1a
 second order nonlinear dielectric susceptibility: Vol. III/41A1A 521III/41A1a
 thermodynamical parameters, vaporization: Vol. III/41A1A 526III/41A1a
 conduction band, effective masses: Vol. III/41A1A 534III/41A1a
 electron loss, yield and X-ray emission spectroscopy: Vol. III/41A1A 554III/41A1a
 data from Raman spectroscopy: Vol. III/41A1A 568III/41A1a
 bulk modulus: Vol. III/41A1A 57III/41A1a
 dielectric constants: Vol. III/41A1A 604III/41A1a
 electrical and thermal transport: Vol. III/41A1A 608III/41A1a
 optical constants: Vol. III/41A1A 611III/41A1a
 sound velocities: Vol. III/41A1A 638III/41A1a
 dependence of phonons on uniaxial stress: Vol. III/41A1A 662III/41A1a
 photoelectric threshold, binding energies of core levels: Vol. III/41A1A 729III/41A1a
 magnetic properties: Vol. III/41A1A 731III/41A1a
 spin-orbit splitting energies: Vol. III/41A1A 755III/41A1a
 mode Grüneisen parameters, effective charge: Vol. III/41A1A 759III/41A1a
 absorption spectra in the vacuum uv: Vol. III/41A1A 764III/41A1a
 phonon line width and eigenvectors, Grüneisen parameters, mean square displacements: Vol. III/41A1A 78III/41A1a
 magnetoresistance: Vol. III/41A1A 781III/41A1a
 carrier mobilities, Hall scattering factor: Vol. III/41A1A 809III/41A1a
 Nernst and Righi-Leduc coefficients: Vol. III/41A1A 813III/41A1a
 lattice parameter, thermal expansion: Vol. III/41A1A 822III/41A1a
 carrier concentrations: Vol. III/41A1A 848III/41A1a
 impurity diffusion coefficients: Vol. III/41A2A 1063III/41A2a
 deep defect states: Vol. III/41A2A 1064III/41A2a
 transition metal impurities: Vol. III/41A2A 1067III/41A2a
 magnetic properties of transition metal impurities: Vol. III/41A2A 1072III/41A2a
 self-diffusion coefficients: Vol. III/41A2A 1077III/41A2a
 solubility of impurities: Vol. III/41A2A 1221III/41A2a
 vibrational modes of impurities: Vol. III/41A2A 1227III/41A2a
 shallow impurities: Vol. III/41A2A 1230III/41A2a

Thermodynamic Properties

 Thermodynamic Properties of Compounds, AsH to As2O5: Vol. IV/19a1 p.254IV/19A1

References

III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/29a
Short: III/29a
Title: Low Frequency Properties of Dielectric Crystals: Second and Higher Order Elastic Constants
Author: Every, A.G.; McCurdy, A.K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29a
Year: 1992
ISBN: 3-540-54410-0
ISBN: 978-3-540-54410-4
Internet Resource: DOI:10.1007/b44185
RefComment: 890 figs., XIV, 743 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The first subvolume III/29a contains exclusively second and higher order elastic constants including temperature and pressure coefficients.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
IV/19A1
Short: IV/19A1
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 1: Elements and Compounds from AgBr to Ba3N2
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A1
Year: 1999
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-64734-1
ISBN: 978-3-540-64734-8
Internet Resource: DOI:10.1007/b68802
RefComment: LVII, 405 pages, with CD-ROM, Hardcover
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

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