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Element System


As-Ga (Arsenic, Gallium)

There are 42 compounds with this exact Element-System in the database.


AsGa
Structure and Molecular Constants
 Structure and Molecular Constants: Molecular Constants Mostly From Microwave, Molecular Beam, Electro Spin Resonance and Sub-Doppler Laser Spectroscopy: Vol. II/24a 2.2.2:28II/24A

GaAs
Crystallography, Structure and Morphology
 bulk structure and bulk lattice parameter(s): Vol. III/24c 1.6, p.22III/24C
 phonon energies (unspecified surface): Vol. III/24c 6.2.3, p.171III/24C
 bulk structure and bulk lattice parameter(s): Vol. III/24d 1.6, p.22III/24D
 bulk structure and bulk lattice parameter(s): Vol. III/24a 1.6, p.22III/24a
 bulk structure and bulk lattice parameter(s): Vol. III/24b 1.6, p.22III/24b
 bulk density, local density of states: Vol. III/24b 3.2.2.4, p.423III/24b
 Table of the structures of intermetallic phases and phases similar to alloys: AcS - AuPr: AsCuZn - AsPbS: Vol. III/6 4.1:85, p.297III/6
Electrical Properties
 Elastic constants of second order: Elastic constants s, c: Vol. III/29a 1.2.1. p.69III/29a
 Elastic constants of second order: Temperature coefficients Tc: Vol. III/29a 1.2.2. p.238III/29a
 Elastic constants of second order: Pressure coefficients Pc: Vol. III/29a 1.2.3. p.277III/29a
 Elastic constants of third and higher order: Tables of third-order stiffnesses: Vol. III/29a 2.2. p.648III/29a
 General data of piezoelectric substances: General data on crystals, ceramics and polymers: Vol. III/29b 3.2. p.22III/29b
 Dielectric constants of piezoelectric substances: Tables of relative dielectric constants (numeric): Vol. III/29b 3.3.2. p.47III/29b
 Dielectric constants of piezoelectric substances: Tables of temperature coefficients of dielectric constants: Vol. III/29b 3.4.1. p.95III/29b
 Electromechanical coupling factors: Tables of piezoelectric constants: Vol. III/29b 3.5.1. p.100III/29b
 Piezooptic, elastooptic, rotooptic coefficients: Cubic system: Classes (-4)3m (T{d}), 432 (O), m3m (O{h}): Vol. III/30a 5.2.2.1. p.25III/30A
 Piezooptic, elastooptic, rotooptic coefficients: Figures: Vol. III/30a 5.2.4. p.95III/30A
 Linear and quadratic electrooptic coefficients: Special introduction: Vol. III/30a 5.3.1.2. p.167III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.2. p.174III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.1. p.171III/30A
 Linear and quadratic electrooptic coefficients: Quadratic electrooptic coefficients: Vol. III/30a 5.3.3.3. p.222III/30A
 Index of refraction: Indices of refraction and Sellmeier coefficients: Vol. III/30a 5.3.4.2. p.235III/30A
 Index of refraction: Temperature coefficients of indices of refraction: Vol. III/30a 5.3.5.2.2. p.281III/30A
 Linear and quadratic electrooptic coefficients: Temperature coefficients of the linear electrooptic coefficients r: Vol. III/30a 5.3.5.1.2. p.280III/30A
 Index of refraction: Figures: Vol. III/30a 5.3.7. p.298III/30A
 Nonlinear dielectric susceptibility: Cubic: Vol. III/30b 6.5.1.1. p.39III/30B
 Nonlinear dielectric susceptibility: Third-order nonlinear dielectric susceptibilities: Vol. III/30b 6.6.1. p.63III/30B
 Nonlinear dielectric susceptibility: Data on crystals (alphabetically ordered substance names): Vol. III/30b 6.7. p.151III/30B
Electronic Properties
 Band structure and core levels of tetrahedrally-bonded semiconductors: GaAs: Vol. III/23a 2.1.15. p.47-55III/23a
 Resistivity/atomic percent impurity in dilute alloys: Table 1: host metal Ga - Zr: Vol. III/15A 1.4.1, p.181III/15a
 Electrical resistivity in Dilute alloys: Application of modified Linde's law: Vol. III/15A 1.4.2, p.254III/15a
Energy Technologies
 Energy Technologies: Renewable Energy: VIII/3C p.280VIII/3C
Magnetic Properties
 Introduction to rare earth compounds: Special properties of rare earth compounds: Vol. III/12c 6.1.0.2, p.63III/12c
 Survey of lanthanide monopnictides: Vol. III/27b1 1.2.1.3, p.68III/27B1
 Figures and tables: Vol. III/27b1 1.2.1.4, p.349III/27B1
 Figures and tables: Vol. III/27b1 1.2.1.4, p.314III/27B1
Semiconductors
 Grüneisen parameters, phonon line shift and width: Vol. III/41A1A 127III/41A1a
 phonon dispersion, phonon spectra: Vol. III/41A1A 128III/41A1a
 internal strain, effective charges: Vol. III/41A1A 165III/41A1a
 second- and third-order elastic moduli and compliances: Vol. III/41A1A 181III/41A1a
 bulk modulus, Young's and torsional moduli: Vol. III/41A1A 186III/41A1a
 phonon lifetime, phonon eigenvectors, mean square displacements: Vol. III/41A1A 215III/41A1a
 sound velocities, ultrasonic attenuation, phonon viscosity: Vol. III/41A1A 255III/41A1a
 lattice parameters, thermal expansion: Vol. III/41A1A 257III/41A1a
 dielectric constants: Vol. III/41A1A 264III/41A1a
 phonon dispersion, phonon frequencies and wavenumbers: Vol. III/41A1A 322III/41A1a
 direct energy gap: Vol. III/41A1A 323III/41A1a
 spin-orbit splitting energies: Vol. III/41A1A 333III/41A1a
 Grüneisen parameters, effective charge: Vol. III/41A1A 335III/41A1a
 other parameters related to conduction band minima, g-factors: Vol. III/41A1A 339III/41A1a
 camel's back structure of X6 conduction band minimum: Vol. III/41A1A 346III/41A1a
 Debye temperature, density, heat capacity, melting point: Vol. III/41A1A 352III/41A1a
 exciton ground and excited states: Vol. III/41A1A 364III/41A1a
 piezoresistance tensor coefficients: Vol. III/41A1A 375III/41A1a
 Nernst coefficient: Vol. III/41A1A 379III/41A1a
 structure, phase diagram, equation of state: Vol. III/41A1A 38III/41A1a
 minority carrier transp., impact ioniz., carrier lifetimes, plasmon energy: Vol. III/41A1A 386III/41A1a
 valence band parameters: Vol. III/41A1A 404III/41A1a
 interband transition energies (critical point energies): Vol. III/41A1A 411III/41A1a
 energies of symmetry points of the band structure: Vol. III/41A1A 428III/41A1a
 refractive index, absorption index, absorption coefficients: Vol. III/41A1A 465III/41A1a
 reflectance, two-photon absorption: Vol. III/41A1A 466III/41A1a
 core level binding energies, photoionization cross-sections: Vol. III/41A1A 468III/41A1a
 indirect energy gap: Vol. III/41A1A 494III/41A1a
 bulk, Young's and torsion moduli, internal strain: Vol. III/41A1A 498III/41A1a
 Auger effect: Vol. III/41A1A 499III/41A1a
 magnetic properties: Vol. III/41A1A 508III/41A1a
 Schottky barriers: Vol. III/41A1A 532III/41A1a
 elastoresistance coefficients: Vol. III/41A1A 542III/41A1a
 piezoelectric constants: Vol. III/41A1A 546III/41A1a
 electrooptic constants, second and third order nonlinear susceptibilities: Vol. III/41A1A 567III/41A1a
 further optical spectra: Vol. III/41A1A 578III/41A1a
 Seebeck coefficient: Vol. III/41A1A 582III/41A1a
 core level energies: Vol. III/41A1A 590III/41A1a
 piezooptic constants, piezobirefringence: Vol. III/41A1A 597III/41A1a
 electron mobility: Vol. III/41A1A 602III/41A1a
 non-parabolicity and warping parameters: Vol. III/41A1A 605III/41A1a
 dielectric constants: Vol. III/41A1A 614III/41A1a
 crystal structure, phases: Vol. III/41A1A 615III/41A1a
 valence bands, effective masses: Vol. III/41A1A 622III/41A1a
 elastic moduli: Vol. III/41A1A 636III/41A1a
 piezoelectric and elastooptic parameters, second- and third-order susceptibilities: Vol. III/41A1A 66III/41A1a
 electron drift velocity and diffusion coefficient: Vol. III/41A1A 690III/41A1a
 thermodynamical parameters, vaporization: Vol. III/41A1A 708III/41A1a
 deformation potentials: Vol. III/41A1A 712III/41A1a
 typical data for semi-insulating GaAs: Vol. III/41A1A 719III/41A1a
 magnetoresistance: Vol. III/41A1A 721III/41A1a
 intrinsic carrier concentration, electrical and thermal conductivity: Vol. III/41A1A 723III/41A1a
 photoemission data: Vol. III/41A1A 735III/41A1a
 transport mechanisms: Vol. III/41A1A 736III/41A1a
 intra- and interband transition energies: Vol. III/41A1A 737III/41A1a
 third order elastic moduli: Vol. III/41A1A 745III/41A1a
 data from Raman spectra: Vol. III/41A1A 761III/41A1a
 lattice parameter, thermal expansion: Vol. III/41A1A 765III/41A1a
 data from photoelectron spectroscopy (ESCA): Vol. III/41A1A 769III/41A1a
 Hall scattering factor: Vol. III/41A1A 779III/41A1a
 band structure: Vol. III/41A1A 787III/41A1a
 absorption spectrum in the vacuum uv: Vol. III/41A1A 797III/41A1a
 conduction band effective masses and related parameters: Vol. III/41A1A 811III/41A1a
 electron-two-phonon deformation potentials: Vol. III/41A1A 812III/41A1a
 hole mobility and drift velocity: Vol. III/41A1A 818III/41A1a
 phonon wavenumbers and frequencies: Vol. III/41A1A 83III/41A1a
 sound velocities: Vol. III/41A1A 830III/41A1a
 optical constants: Vol. III/41A1A 831III/41A1a
 data from electron loss, yield and X-ray emission spectroscopy: Vol. III/41A1A 861III/41A1a
 phase transition parameters: Vol. III/41A1A 9III/41A1a
 hole traps (directly measured cross sections): Vol. III/41A2A 1030III/41A2a
 vibrational modes of impurities and defects: lithium complexes: Vol. III/41A2A 1038III/41A2a
 impurity diffusion coefficients: Vol. III/41A2A 1042III/41A2a
 shallow defects and impurity complexes: copper complexes: Vol. III/41A2A 1043III/41A2a
 gallium vacancy: Vol. III/41A2A 1053III/41A2a
 magnetic properties and ESR of transition metal impurities: Vol. III/41A2A 1054III/41A2a
 photoluminescence of low temperature grown GaAs: Vol. III/41A2A 1058III/41A2a
 experimental results on the 0.67...0.68 eV photoluminescence band: Vol. III/41A2A 1062III/41A2a
 electron traps induced by proton and heavy ion implantation: Vol. III/41A2A 1066III/41A2a
 vibrational modes of impurities and defects: istopic clusters: Vol. III/41A2A 1071III/41A2a
 self-diffusion coefficients: Vol. III/41A2A 1076III/41A2a
 photoluminescence in n- and p-type GaAs: Vol. III/41A2A 1079III/41A2a
 photoluminescence bands: Vol. III/41A2A 1086III/41A2a
 diffusion of impurities and defects, general: Vol. III/41A2A 1087III/41A2a
 shallow defects and impurity complexes: the 1.5040...1.5110 eV photoluminescence lines: Vol. III/41A2A 1091III/41A2a
 heavy doping effects: Vol. III/41A2A 1092III/41A2a
 properties of fast-electron-irradiated GaAs: Vol. III/41A2A 1093III/41A2a
 properties of plastically deformed GaAs: Vol. III/41A2A 1095III/41A2a
 energy levels of transition metal impurities: Vol. III/41A2A 1101III/41A2a
 binding energy of residual donors: Vol. III/41A2A 1103III/41A2a
 electron traps (directly measured carrier cross sections): Vol. III/41A2A 1104III/41A2a
 hole traps (cross section not measured): Vol. III/41A2A 1105III/41A2a
 optical properties of isolated transition metal impurities: Vol. III/41A2A 1107III/41A2a
 magnetic properties of transition metal complexes: Vol. III/41A2A 1112III/41A2a
 acceptor ground state binding energies: Vol. III/41A2A 1114III/41A2a
 optical properties of deep defects, general remarks: Vol. III/41A2A 1115III/41A2a
 electron traps (cross section not known): Vol. III/41A2A 1116III/41A2a
 capture and emission data for transition metal impurities: Vol. III/41A2A 1117III/41A2a
 low temperature grown GaAs: Vol. III/41A2A 1120III/41A2a
 experimental results on the 0.77...0.8 eV photoluminescence band: Vol. III/41A2A 1130III/41A2a
 bound exciton transition energies: Vol. III/41A2A 1132III/41A2a
 magnetic properties of isolated, substitutional transition metal impurities: Vol. III/41A2A 1136III/41A2a
 oxygen and hydrogen in GaAs: Vol. III/41A2A 1137III/41A2a
 excited states related to transition metal impurities: Vol. III/41A2A 1138III/41A2a
 solubility of impurities: Vol. III/41A2A 1142III/41A2a
 bound exciton lifetimes: Vol. III/41A2A 1144III/41A2a
 radiation-induced deep defect states: hole traps induced by electron irradiation: Vol. III/41A2A 1158III/41A2a
 vibrational modes of impurities and defects: substitutional impurity complexes: Vol. III/41A2A 1159III/41A2a
 hole traps induced by proton and heavy ion implantation: Vol. III/41A2A 1163III/41A2a
 optical transitions in absorption related to the EL2 defect: Vol. III/41A2A 1164III/41A2a
 optical properties of transition metal impurity complexes: Vol. III/41A2A 1165III/41A2a
 transition energies of highly excited acceptor states: Vol. III/41A2A 1166III/41A2a
 vibrational modes of impurities and defects: irradiation defects: Vol. III/41A2A 1169III/41A2a
 ESR, ENDOR, and ODMR data: Vol. III/41A2A 1176III/41A2a
 vibrational modes of impurities and defects: hydrogen complexes: Vol. III/41A2A 1178III/41A2a
 radiation-induced deep defect states: electron traps induced by electron irradiation: Vol. III/41A2A 1181III/41A2a
 shallow donors: chemical shifts, photoconductivity measurements and photoluminescence: Vol. III/41A2A 1189III/41A2a
 the EL2/As(Ga) defect: Vol. III/41A2A 1190III/41A2a
 shallow acceptors: ground state binding energies, general remarks: Vol. III/41A2A 1194III/41A2a
 energy splittings of excited acceptor states: Vol. III/41A2A 1196III/41A2a
 intrinsic or unidentified deep defect states: Vol. III/41A2A 1202III/41A2a
 ESR data for shallow defects: Vol. III/41A2A 1212III/41A2a
 optical bands related to the 78/203 meV acceptor: Vol. III/41A2A 1214III/41A2a
 calibration of local vibrational mode absorption lines: Vol. III/41A2A 1219III/41A2a
 diffusion of Zn in GaAs: Vol. III/41A2A 1224III/41A2a
 properties of rare earth impurities: Vol. III/41A2A 1226III/41A2a
 properties of acceptor excited states: Vol. III/41A2A 1228III/41A2a
 vibrational modes of impurities and defects: isolated impurities: Vol. III/41A2A 1229III/41A2a
Thermodynamic Properties
 Thermodynamic Properties of Compounds, Al2O3-SrO to GeAs: Vol. IV/19a1 p.249IV/19A1

As-Ga
Thermodynamic Properties
 Crystallographic and Thermodynamic Data: Vol. IV/5A p.297IV/5a
 Binary Systems: As-Ga: Vol. IV/19b1 p.238IV/19B1

As in GaAs
Atomic Defects and Diffusion
 Diffusion in compound semiconductors - Figures: Vol. III/33A 3, p.64III/33A
 Diffusion in III-V compounds and their ternary alloys: Vol. III/33A 3.5, p.8III/33A

As4/GaAs (100)
Atomic Defects and Diffusion
 Surface diffusion on semiconductors - Tables: Vol. III/33A 7, p.11III/33A

Ga (:As)
Magnetic Properties
 3d - Ga alloys and compounds: Tables: Vol. III/32B 1.5.3.4.2, p.293III/32B

GaAs(001)...(133)
Crystallography, Structure and Morphology
 surface preparation: Vol. III/24a 2.3.2.1.3, p.315III/24a

GaAs(100)
Crystallography, Structure and Morphology
 Halogens on metals and semiconductors: Vol. III/42A1 3.4.3.6.2.2, p.442III/42A1
 Charged particles-surface interaction: LEED, RHEED structure: Vol. III/24c 6.1.2, p.60III/24C
 Charged particles-surface interaction: EELS spectra: Vol. III/24c 6.2.2.2.1, p.151III/24C
 Structural properties: Surface Brillouin Zone: Vol. III/24c 7.2, p.293III/24C
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.57III/24D
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.3, p.67III/24D
 Structural properties: Surface Brillouin Zone: Vol. III/24d 8.2.1, p.74III/24D
 Imaging of surfaces: STM image(s): Vol. III/24d 9.2.2.2, p.397III/24D
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.67III/24a
 Structural properties: surface composition, contamination: Vol. III/24a 2.2.2.2, p.183III/24a
 Imaging of surfaces: optical microscopy image(s): Vol. III/24a 2.3.2.1.3, p.318III/24a
 Structural properties: Surface Brillouin Zone: Vol. III/24b 3.2.2.4, p.417III/24b
 Structural properties: Surface Brillouin Zone: Vol. III/24b 4.1.1.3.2, p.436III/24b

GaAs(100)...(113)
Crystallography, Structure and Morphology
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.313III/24a

GaAs(100)1x6
Crystallography, Structure and Morphology
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.57III/24D
 surface preparation: Vol. III/24a 2.2.2.2, p.182III/24a

GaAs(100)2x1
Crystallography, Structure and Morphology
 Electronic properties: density, local density of states: Vol. III/24b 3.2.2.4, p.419III/24b

GaAs(100)2x4/c(2x8)
Crystallography, Structure and Morphology
 Structural properties: reconstruction, relaxation: Vol. III/24c 6.1.2, p.60III/24C
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.58III/24D
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.3, p.67III/24D
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24d 9.2.2.2, p.389III/24D
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.204III/24a
 Structural properties: reconstruction, relaxation: Vol. III/24a 2.2.2.2, p.182III/24a
 Structural properties: unit cell: Vol. III/24a 2.2.2.2, p.204III/24a
 Structural properties: surface composition, contamination: Vol. III/24a 2.2.2.2, p.182III/24a
 Structural properties: defect(s): Vol. III/24a 2.3.2.1.3, p.319III/24a
 Electronic properties: surface state(s) band structure, projected band structure: Vol. III/24b 3.2.2.4, p.419III/24b

GaAs(100)3x6
Crystallography, Structure and Morphology
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.58III/24D

GaAs(100)4x1
Crystallography, Structure and Morphology
 Electromagnetic radiation-surface interaction: ARUPS spectra: Vol. III/24d 8.2.2.2.4, p.280III/24D

GaAs(100)4x2/c(8x2)
Crystallography, Structure and Morphology
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.57III/24D
 Structural properties: reconstruction, relaxation: Vol. III/24d 9.2.2.2, p.388III/24D
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.203III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.182III/24a
 Structural properties: unit cell: Vol. III/24a 2.2.2.2, p.203III/24a
 Structural properties: surface composition, contamination: Vol. III/24a 2.2.2.2, p.182III/24a

GaAs(100)4x6
Crystallography, Structure and Morphology
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.57III/24D
 surface preparation: Vol. III/24a 2.2.2.2, p.182III/24a

GaAs(100)c(2x6)
Crystallography, Structure and Morphology
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.203III/24a

GaAs(100)c(4x4)
Crystallography, Structure and Morphology
 Structural properties: surface, subsurface strain: Vol. III/24c 6.3.2, p.222III/24C
 Electromagnetic radiation-surface interaction: reflectance, reflectance anisotropy: Vol. III/24d 8.1.2.2.2, p.58III/24D
 Structural properties: dimer(s), dimer(s) orientation, interdimer distance: Vol. III/24d 9.2.2.2, p.389III/24D
 Structural properties: reconstruction, relaxation: Vol. III/24a 2.2.2.2, p.183III/24a
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.204III/24a
 Structural properties: surface composition, contamination: Vol. III/24a 2.2.2.2, p.183III/24a
 Electronic properties: surface state(s) band structure, projected band structure: Vol. III/24b 3.2.2.4, p.421III/24b

GaAs(100)c(6x4)
Crystallography, Structure and Morphology
 surface preparation: Vol. III/24a 2.2.2.2, p.182III/24a

GaAs(100)v
Crystallography, Structure and Morphology
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.314III/24a

GaAs (110)
Crystallography, Structure and Morphology
 Halogens on metals and semiconductors: Vol. III/42A1 3.4.3.6.2.2, p.442III/42A1
 Structural properties: atomic structural parameter(s): Vol. III/24c 6.1.2, p.60III/24C
 Vibrational and excitational properties: plasmon energies: Vol. III/24c 6.2.2.2.1, p.154III/24C
 Structural properties: atomic structural parameter(s): Vol. III/24c 6.3.2, p.213III/24C
 Structural properties: atomic lateral displacements: Vol. III/24c 6.3.2, p.223III/24C
 Structural properties: dimer(s), dimer(s) orientation, interdimer distance: Vol. III/24c 6.3.2, p.253III/24C
 Charged particles-surface interaction: ion charge exchange (LEIS, projectile: Ne): Vol. III/24c 6.3.2, p.205III/24C
 Atom-surface interaction: atom-surface interaction potential parameter(s) (He): Vol. III/24c 7.2, p.301III/24C
 Electronic properties: surface states transition(s): Vol. III/24d 8.1.2.2.2, p.60III/24D
 Structural properties: Surface Brillouin Zone: Vol. III/24d 8.2.1, p.74III/24D
 Electronic properties: core leve shift(s): Vol. III/24d 8.2.2.2.4, p.276III/24D
 Structural properties: steps, step model(s): Vol. III/24d 9.2.2.2, p.391III/24D
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.70III/24a
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.205III/24a
 Structural properties: reconstruction, relaxation: Vol. III/24a 2.2.2.2, p.183III/24a
 Structural properties: atomic structural parameter(s): Vol. III/24a 2.2.2.2, p.196III/24a
 Structural properties: atomic structural parameter(s): Vol. III/24a 2.2.2.2, p.183III/24a
 Structural properties: unit cell: Vol. III/24a 2.2.2.2, p.205III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.183III/24a
 Structural properties: atomic vertical displacements: Vol. III/24a 2.2.2.2, p.196III/24a
 Electronic properties: Fermi level position, pinning: Vol. III/24a 2.3.2.1.3, p.315III/24a
 Imaging of surfaces: STM image(s): Vol. III/24b 3.2.1.3, p.361III/24b
 Electromagnetic radiation-surface interaction: photoemission spectra: Vol. III/24b 3.2.2.3, p.396III/24b
 Structural properties: Surface Brillouin Zone: Vol. III/24b 4.1.1.3.2, p.436III/24b
 Vibrational and excitational properties: phonon energies: Vol. III/24b 4.1.2, p.450III/24b

GaAs(110)v
Crystallography, Structure and Morphology
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.315III/24a

GaAs (111)
Crystallography, Structure and Morphology
 Halogens on metals and semiconductors: Vol. III/42A1 3.4.3.6.2.2, p.442III/42A1
 Structural properties: facets, faceting: Vol. III/24c 6.1.2, p.60III/24C
 Structural properties: Surface Brillouin Zone: Vol. III/24c 7.2, p.293III/24C
 Structural properties: Surface Brillouin Zone: Vol. III/24d 8.2.1, p.74III/24D
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24d 9.2.2.2, p.393III/24D
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.72III/24a
 surface preparation: Vol. III/24a 2.3.2.1.3, p.316III/24a
 Electronic properties: surface state(s) band structure, projected band structure: Vol. III/24b 3.2.2.4, p.422III/24b
 Structural properties: Surface Brillouin Zone: Vol. III/24b 4.1.1.3.2, p.436III/24b

GaAs(111)...(113)
Crystallography, Structure and Morphology
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.316III/24a

GaAs(111)...(133)
Crystallography, Structure and Morphology
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.316III/24a

GaAs(111)2x2
Crystallography, Structure and Morphology
 Charged particles-surface interaction: LEED, RHEED structure: Vol. III/24c 6.1.2, p.60III/24C
 Structural properties: reconstruction, relaxation: Vol. III/24a 2.2.2.2, p.184III/24a
 Structural properties: atomic structural model(s), reconstruction model(s): Vol. III/24a 2.2.2.2, p.205III/24a
 Electromagnetic radiation-surface interaction: photoemission spectra: Vol. III/24b 3.2.2.4, p.423III/24b

GaAs(111)3x3
Crystallography, Structure and Morphology
 surface preparation: Vol. III/24c 6.1.2, p.60III/24C

GaAs(111)v
Crystallography, Structure and Morphology
 Structural properties: step parameter(s): Vol. III/24a 2.3.2.1.3, p.317III/24a

GaAs(112)
Crystallography, Structure and Morphology
 surface preparation: Vol. III/24c 6.1.2, p.61III/24C
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.80III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.185III/24a
 Charged particles-surface interaction: LEED, RHEED structure: Vol. III/24a 2.3.2.1.3, p.316III/24a

GaAs(113)
Crystallography, Structure and Morphology
 Charged particles-surface interaction: LEED, RHEED intensity analysis, calculations: Vol. III/24c 6.1.2, p.61III/24C
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.88III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.185III/24a
 Charged particles-surface interaction: LEED, RHEED structure: Vol. III/24a 2.3.2.1.3, p.313III/24a

GaAs(115)
Crystallography, Structure and Morphology
 ideal surface structure (computational parameters): Vol. III/24a 2.1.1.5.1, p.39III/24a
 Structural properties: angle from LIP: Vol. III/24a 2.3.2.1.3, p.313III/24a

GaAs(117)
Crystallography, Structure and Morphology
 ideal surface structure (computational parameters): Vol. III/24a 2.1.1.5.1, p.39III/24a
 surface preparation: Vol. III/24a 2.3.2.1.3, p.313III/24a

GaAs(122)
Crystallography, Structure and Morphology
 ideal surface unit cell: Vol. III/24a 2.1.2.1.2, p.83III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.185III/24a
 Charged particles-surface interaction: LEED, RHEED structure: Vol. III/24a 2.3.2.1.3, p.317III/24a

GaAs(133)
Crystallography, Structure and Morphology
 ideal surface atomic coordinates: Vol. III/24a 2.1.2.1.2, p.95III/24a
 surface preparation: Vol. III/24a 2.2.2.2, p.185III/24a
 Structural properties: step parameter(s): Vol. III/24a 2.3.2.1.3, p.315III/24a

GaAs/As4 (100)
Crystallography, Structure and Morphology
 Surface diffusion on metals, semiconductors, and insulators: Vol. III/42A1 3.11.3.2.1.1, p.484III/42A1

GaAs <g>
Thermodynamic Properties
 Thermodynamic Properties of Compounds, Al2O3-SrO to GeAs: Vol. IV/19a1 p.249IV/19A1

Ga/GaAs (100)
Atomic Defects and Diffusion
 Surface diffusion on semiconductors - Tables: Vol. III/33A 7, p.12III/33A

Ga in GaAs
Atomic Defects and Diffusion
 Diffusion in compound semiconductors - Figures: Vol. III/33A 3, p.64III/33A
 Diffusion in III-V compounds and their ternary alloys: Vol. III/33A 3.5, p.8III/33A

a-GaAs
Semiconductors
 Amorphous III-V compounds general remarks to wide gap photoconductive organic semiconductors: Vol. III/41E 4750III/41E
 Amorphous III-V compounds optical properties: Vol. III/41E 4272III/41E
 Amorphous III-V compounds general and structural characterization: Vol. III/41E 4295III/41E
 Amorphous III-V compounds table to optical properties: survey of optical data: Vol. III/41E 4356III/41E
 Amorphous III-V compounds density of states: Vol. III/41E 4973III/41E
 Amorphous III-V compounds transport properties: Vol. III/41E 5013III/41E
 Amorphous III-V compounds table to structural characterization: Vol. III/41E 5108III/41E
 Amorphous III-V compounds vibrational properties: Vol. III/41E 5130III/41E
 Amorphous III-V compounds table to vibrational properties: local modes: Vol. III/41E 5215III/41E

GaAs/Ga (100)
Crystallography, Structure and Morphology
 Surface diffusion on metals, semiconductors, and insulators: Vol. III/42A1 3.11.3.2.4, p.494III/42A1

GaAs/Ga (111)b
Crystallography, Structure and Morphology
 Surface diffusion on metals, semiconductors, and insulators: Vol. III/42A1 3.11.3.2.1.2, p.488III/42A1

GaAs / GaAs
Crystallography, Structure and Morphology
 Epitaxies of inorganic deposit crystals on inorganic substrate crystals: Compounds of arsenic and antimony: Vol. III/8 2.9.1:2129, p.73III/8


References:
II/24A
Short: II/24A
Title: Molecular Constants mostly from Microwave, Molecular Beam, and Sub-Doppler Laser Spectroscopy: Rotational, l-type, Centrifugal Distortion and Related Constants of Diamagnetic Diatomic, Linear, and Symmetric Top Molecules
Author: Demaison, J.; Hübner, H.; Wlodarczak, G.
Editor: Hüttner, W.
Source: Landolt-Börnstein, New Series
Volume: II/24A
Year: 1998
Keyword: Diamagnetics Diatomics; Linear Symmetric Rotors; Molecular Constants; Molecules
ISBN: 3-540-63267-0
ISBN: 978-3-540-63267-2
Internet Resource: DOI:10.1007/b60165
RefComment: VIII, 286 pages. Hardcover
Abstract: Volume II/24 presents the spectroscopic data on diamagnetic and paramagnetic molecules as well as on molecular ions and radicals up to date considering the publications up to and partly including 1997. The spectroscopic information collected in this volume has been obtained principally from gas phase microwave measurements. Volume II/24 is a supplement to volumes II/4, II/6, II/14, and II/19 and is planned to appear in five subvolumes, the last of which will contain the substance index taking into account all molecules worked at since 1967 in the volumes mentioned and will provide cross references to and between all tables of these. The present subvolume II/24A contains the general introduction and tables of rotational and centrifugal distortion constants of diamagnetic diatomic, linear and symmetric-top molecules, i.e. data which roughly specifies the frequencies of the rotational transitions of these types of rotors.
III/12c
Short: III/12c
Title: Magnetic and Other Properties of Oxides and Related Compounds: Hexagonal Ferrites. Special Lanthanide and Actinide Compounds
Author: Arons, R.R.; Bonnenberg, D.; Grünberg, P.; Hempel, K.A.; Köbler, U.; Lütgemeier, H.; Maletta, H.J.; Roos, W.; Sauer, Ch.; Zinn, W.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/12c
Year: 1982
ISBN: 3-540-10137-3
ISBN: 978-3-540-10137-6
Internet Resource: DOI:10.1007/b19987
RefComment: 1034 figs., XI, 604 pages. Hardcover
III/15a
Short: III/15a
Title: Metals: Electronic Transport Phenomena: Electrical Resistivity, Kondo and Spin Fluctuation Systems, Spin Glasses and Thermopower
Author: Bass, J.; Fischer, K.H.
Editor: Hellwege, K.-H.; Olsen, J.L.
Source: Landolt-Börnstein, New Series
Volume: III/15a
Year: 1982
ISBN: 3-540-11082-8
ISBN: 978-3-540-11082-8
Internet Resource: DOI:10.1007/b29240
RefComment: 875 figs., VIII, 396 pages. Hardcover
Abstract: The first two subvolumes of volume III/15 contain data on electrical transport in metals. Both experimental and theoretical results published up to 1981 have been included. In the third subvolume data on thermal - predominantly electronic - transport of pure metals and alloys are presented, the literature up to 1989 has been taken into account.
III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/27B1
Short: III/27B1
Title: Magnetic Properties of Non-Metallic Inorganic Compounds Based on Transition Elements: Pnictides and Chalcogenides II (Lanthanide Monopnictides)
Author: Palewski, T.; Suski, W.
Editor: Wijn, H.P.J.
Source: Landolt-Börnstein, New Series
Volume: III/27B1
Year: 1998
Keyword: chalcogenides; lanthanide pnictides and chalcogenides; magnetic properties
ISBN: 3-540-56066-1
ISBN: 978-3-540-56066-1
Internet Resource: DOI:10.1007/b43998
RefComment: 748 figs., VII, 453 pages. Hardcover
Abstract: Volume III/27 deals with magnetic properties of non-metallic inorganic compounds such as pnictides, chalcogenides, halides, borates, silicates and phosphates, based on transition metal elements. Subvolume 27B covers the magnetic and related properties of lanthanide pnictides and chalcogenides (except oxides). During the last decades considerable progress in the research of these families of substances has been made which have been compiled in the three parts 27B1, 27B2 and 27B3. The first part B1 with a compilation of the properties of monopnictides is published now. Parts B2 and B3 cover the monochalcogenides and the more complex (binary and ternary) compounds, respectively.
III/29a
Short: III/29a
Title: Low Frequency Properties of Dielectric Crystals: Second and Higher Order Elastic Constants
Author: Every, A.G.; McCurdy, A.K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29a
Year: 1992
ISBN: 3-540-54410-0
ISBN: 978-3-540-54410-4
Internet Resource: DOI:10.1007/b44185
RefComment: 890 figs., XIV, 743 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The first subvolume III/29a contains exclusively second and higher order elastic constants including temperature and pressure coefficients.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/32B
Short: III/32B
Title: Magnetic Properties of Metals: Alloys and Compounds of d-Elements with Main Group Elements. Part 1
Author: Booth, J.G.; Nakai, Y.; Tsunoda, Y.
Editor: Wijn, H.P.J.
Source: Landolt-Börnstein, New Series
Volume: III/32B
Year: 1999
Keyword: Magnetic properties
ISBN: 3-540-62472-4
ISBN: 978-3-540-62472-1
Internet Resource: DOI:10.1007/b52852
RefComment: 691 figs., XIV, 348 pages, with CD-ROM, Hardcover
Abstract: Volume 32 of Group III is a supplement to volume III/19 and deals with the magnetic properties of metals, alloys and metallic compounds which contain at least one transition element.The present subvolume III/32B provides comprehensive and evaluated data on magnetic properties of alloys and compounds of d-elements with main group elements published mainly in the previous decade.
III/33A
Short: III/33A
Title: Diffusion in Semiconductors and Non-Metallic Solids: Diffusion in Semiconductors
Author: Allen, C.E.; Beke, D.L.; Bracht, H.; Bruff, C.M.; Dutt, M.B.; Erdélyi, G.; Gas, P.; d'Heurle, F.M.; Murch, G.E.; Seebauer, E.G.; Sharma, B.L.; Stolwijk, N.A.
Editor: Beke, D.L.
Source: Landolt-Börnstein, New Series
Volume: III/33A
Year: 1998
Keyword: diffusion in semiconductors; semiconductors
ISBN: 3-540-60964-4
ISBN: 978-3-540-60964-3
Internet Resource: DOI:10.1007/b53031
RefComment: 403 figs., XIII, 480 pages. With CD-ROM. Hardcover
Abstract: This new volume of Landolt-Börnstein consits of two subvolumes. A on Diffusion in Semiconductors and B on Diffusion in Non-Metallic Solides. This separation was necessary, because the field and the number of data is too large to be compressed into a single volume only. This separation - we hope - also reflects the expected difference in the interets of potential users.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/41E
Short: III/41E
Title: Semiconductors: Ternary Compounds, Organic Semiconductors
Author: Dittrich, H.; Karl, N.; Kück, S.; Schock, H.W.
Editor: Madelung, O.
Source: Landolt-Börnstein, New Series
Volume: III/41E
Year: 2000
Keyword: semiconductors
ISBN: 3-540-66781-4
ISBN: 978-3-540-66781-0
Internet Resource: DOI:10.1007/b72741
RefComment: 590 figs., XVIII, 518 pages, Hardcover
Abstract: Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of todays scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22.
III/42A1
Short: III/42A1
Title: Physics of Covered Solid Surfaces: Adsorbed Layers on Surfaces. Part 1: Adsorption on Surfaces and Surface Diffusion of Adsorbates
Author: Altman, E.I.; Bienfait, M.; Bonzel, H.P.; Brune, H.; Diehl, R.; Jung, M.Y.L.; Lifshitz, V.G.; Michel, M.E.; Miranda, R.; McGrath, R.; Oura, K.; Saranin, A.A.; Seebauer, E.G.; Zeppenfeld, P.; Zotov, A.V.
Source: Landolt-Börnstein, New Series
Volume: III/42A1
Year: 2001
ISBN: 3-540-41223-9
ISBN: 978-3-540-41223-6
Internet Resource: DOI:10.1007/b71466
RefComment: 353 figs., XXII, 530 pages, with CD-ROM, Hardcover
Abstract: Surface Science is understood as a relatively young scientific discipline, concerned with the physical and chemical properties of and phenomena on clean and covered solid surfaces, studied under a variety of conditions. The adsorption of atoms and molecules on solid surfaces is, for example, such a condition, connected with more or less drastic changes of all surface properties. The present volume 42 is devoted to Covered Solid Surfaces and, in particular, Subvolume A to Adsorbed Layers on Surfaces. It is as such a collection of data obtained for adsorbates on well-defined crystalline surfaces. "Well-defined" means surfaces of known crystallographic structure and chemical composition.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
III/8
Short: III/8
Title: Epitaxy Data of Inorganic and Organic Crystals
Author: Gebhardt, M.; Neuhaus, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/8
Year: 1972
ISBN: 3-540-05732-3
ISBN: 978-3-540-05732-1
Internet Resource: DOI:10.1007/b19983
RefComment: VII,186 pages. Hardcover
Abstract: The planes, directions and periods and the misfits of orientation are given for about 3700 epitaxial systems.
IV/19A1
Short: IV/19A1
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 1: Elements and Compounds from AgBr to Ba3N2
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A1
Year: 1999
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-64734-1
ISBN: 978-3-540-64734-8
Internet Resource: DOI:10.1007/b68802
RefComment: LVII, 405 pages, with CD-ROM, Hardcover
IV/19B1
Short: IV/19B1
Title: Thermodynamic Properties of Inorganic Materials: Binary Systems. Part 1: Elements and Binary Systems from Ag-Al to Au-Tl
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19B1
Year: 2002
Internet Resource: DOI:10.1007/b68942
IV/5a
Short: IV/5a
Title: Phase Equilibria, Crystallographic and Thermodynamic Data of Binary Alloys: Ac-Au ... Au-Zr
Author: Predel, B.
Editor: Madelung, O.
Source: Landolt-Börnstein, New Series
Volume: IV/5a
Year: 1991
ISBN: 3-540-15516-3
ISBN: 978-3-540-15516-4
Internet Resource: DOI:10.1007/b20007
RefComment: 718 figs., XXVIII, 511 pages. Hardcover
Abstract: For everyone concerned with the technology and application of metals and alloys and with the development of new metallic materials, a detailed knowledge of phase equilibria is indispensable. Also, information on the thermodynamic and crystallographic data of the systems under investigation is essential, and often metastable crystalline phases as well as quasicrystalline or amorphous alloys are of interest. Volume IV/5 presents such data.
VIII/3C
Short: VIII/3C
Title: Energy Technologies: Renewable Energy
Author: Bandi, A.; Bogenrieder, W.; Braitsch, W.; Clauser, C.; Dafu, Y.; Fisch, M.N.; Gökler, G.; Goetzberger, A.; Haas, H.; Hein, D.; Heinloth, K.; Huckemann, V.; Karl, J.; Laue, H.J.; Neumann, A.; Pürer, E.; Richter, S.; Rosillo-Calle, F.; Shuqing, W.; Song, Won-Oh; Specht, M.; Strobl, Th.; van Walsum, W.; Wagner, H.J.; Wagner, U.; Ziqin, T.; Zunic, F.
Editor: Heinloth, K.
Source: Landolt-Börnstein, New Series
Volume: VIII/3C
Page: 1-626
Year: 2006
ISBN: 978-3-540-42962-3
ISBN: 3-540-42962-X
RefComment: 408 figs., XXIII


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