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Silicon (Si)

Compound Descriptions:

Structure Drawing
Formula:Si
Element System:Si
Element Names:Silicon
Molecular Weight:28.086 g/mol
Name(s):Silicon
silicium
Hexsil
Metasilicon 325A
Sicomill 4C-P
Sicomill Grade 2
Silgrain Standard
Silicon element
SILSO
Silicon metal
Polysilicon
CAS-RN:7440-21-3, 17375-03-0, 71536-23-7, 72516-01-9, 72516-02-0, 72516-03-1, 90337-93-2, 152284-21-4, 157383-37-4, 160371-18-6
EINECS:231-130-8 EINECS2
Classification:no charge; 1fragment

European Regulations

1 matching entries in european regulations: ECHA-pre

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

 bulk structure and bulk lattice parameter(s): Vol. III/24c 1.6, p.24III/24C
 bulk structure and bulk lattice parameter(s): Vol. III/24d 1.6, p.24III/24D
 bulk structure and bulk lattice parameter(s): Vol. III/24a 1.6, p.24III/24a
 bulk structure and bulk lattice parameter(s): Vol. III/24b 1.6, p.24III/24b
 Table of the structures of elements: Mo - Zr: Vol. III/6 2.1:89, p.24III/6
 Elements: Tables: Se - Zr: Vol. III/14a 2.1, p.38III/14a
 Figures: Borides: Vol. III/14a 6.2, p.418III/14a

Electrical Properties

 Elastic constants of second order: Elastic constants s, c: Vol. III/29a 1.2.1. p.15III/29a
 Elastic constants of second order: Temperature coefficients Tc: Vol. III/29a 1.2.2. p.225III/29a
 Elastic constants of second order: Pressure coefficients Pc: Vol. III/29a 1.2.3. p.273III/29a
 Elastic constants of third and higher order: Tables of third-order stiffnesses: Vol. III/29a 2.2. p.648III/29a
 Elastic constants of third and higher order: The third and higher-order elastic constants: Vol. III/29a 2.4. p.667III/29a
 Piezooptic, elastooptic, rotooptic coefficients: Cubic system: Classes (-4)3m (T{d}), 432 (O), m3m (O{h}): Vol. III/30a 5.2.2.1. p.40III/30A
 Piezooptic, elastooptic, rotooptic coefficients: Figures: Vol. III/30a 5.2.4. p.116III/30A
 Nonlinear dielectric susceptibility: Third-order nonlinear dielectric susceptibilities: Vol. III/30b 6.6.1. p.64III/30B
 Nonlinear dielectric susceptibility: Data on crystals (alphabetically ordered substance names): Vol. III/30b 6.7. p.276III/30B

Electronic Properties

 Band structure and core levels of tetrahedrally-bonded semiconductors: Si: Vol. III/23a 2.1.3. p.15-20III/23a
 Superconducting Properties: Si (Silicon): Vol. III/21d 677III/21d

Energy Technologies

 Renewable Energy: VIII/3C p.280VIII/3C

Semiconductors

 thermal expansion: Vol. III/41A1A 115III/41A1a
 high-frequency dielectric constant: Vol. III/41A1A 14III/41A1a
 phase transition pressure and volume change: Vol. III/41A1A 142III/41A1a
 fourth-order elastic constants of Si-I: Vol. III/41A1A 150III/41A1a
 phonon wavenumbers and frequencies: Vol. III/41A1A 151III/41A1a
 structure: Vol. III/41A1A 164III/41A1a
 elasto-optic (photoelastic) coefficients: Vol. III/41A1A 166III/41A1a
 pressure dependence of elastic moduli of Si-I: Vol. III/41A1A 170III/41A1a
 sound velocities: Vol. III/41A1A 177III/41A1a
 phonon line widths and related parameters: Vol. III/41A1A 185III/41A1a
 Raman frequencies, dependence on various parameters: Vol. III/41A1A 199III/41A1a
 internal strain: Vol. III/41A1A 205III/41A1a
 critical point wavenumbers and phonon frequencies: Vol. III/41A1A 22III/41A1a
 anharmonicity parameter of the LTO mode (Si-I, diamond structure): Vol. III/41A1A 230III/41A1a
 elastic moduli of other Si modifications: Vol. III/41A1A 232III/41A1a
 third-order elastic constants of Si-I: Vol. III/41A1A 260III/41A1a
 refractive index: Vol. III/41A1A 271III/41A1a
 absorption index, absorption coefficient: Vol. III/41A1A 274III/41A1a
 higher band-band transitions (critical point energies): Vol. III/41A1A 277III/41A1a
 electron mobility: Vol. III/41A1A 279III/41A1a
 electron drift velocity, warm electrons, intervalley relaxation time: Vol. III/41A1A 282III/41A1a
 mode Grüneisen parameters: Vol. III/41A1A 29III/41A1a
 magnetic properties: Vol. III/41A1A 290III/41A1a
 pressure dependence of phonon wavenumbers and frequencies: Vol. III/41A1A 30III/41A1a
 data from Raman spectra: Vol. III/41A1A 308III/41A1a
 third-order susceptibility: Vol. III/41A1A 31III/41A1a
 thermodynamical parameters: Vol. III/41A1A 337III/41A1a
 hole drift velocity and diffusion: Vol. III/41A1A 351III/41A1a
 electrical conductivity: Vol. III/41A1A 356III/41A1a
 direct gap: Vol. III/41A1A 363III/41A1a
 third order susceptibilities: Vol. III/41A1A 392III/41A1a
 Seebeck and Nernst coefficients: Vol. III/41A1A 397III/41A1a
 transport mechanism: Vol. III/41A1A 414III/41A1a
 valence band, effective masses: Vol. III/41A1A 416III/41A1a
 piezooptic constants: Vol. III/41A1A 422III/41A1a
 magnetoresistance: Vol. III/41A1A 424III/41A1a
 phase diagram, equation of state: Vol. III/41A1A 48III/41A1a
 exciton ground and related states, biexitons: Vol. III/41A1A 502III/41A1a
 reflectance, dielectric constants: Vol. III/41A1A 518III/41A1a
 conduction band, effective masses: Vol. III/41A1A 524III/41A1a
 i.r. and two-photon absorption, further optical parameters: Vol. III/41A1A 535III/41A1a
 second order elastic moduli: Vol. III/41A1A 536III/41A1a
 lattice parameters: Vol. III/41A1A 54III/41A1a
 piezo- and elastoresistance coefficients: Vol. III/41A1A 549III/41A1a
 normal and high pressure phases, liquid phase: Vol. III/41A1A 564III/41A1a
 hole mobility: Vol. III/41A1A 573III/41A1a
 Grüneisen parameters and related data: Vol. III/41A1A 576III/41A1a
 intrinsic carrier concentration: Vol. III/41A1A 586III/41A1a
 band structure: Vol. III/41A1A 587III/41A1a
 phonon dispersion relations: Vol. III/41A1A 59III/41A1a
 lattice parameter, thermal expansion: Vol. III/41A1A 591III/41A1a
 valence band parameters: Vol. III/41A1A 607III/41A1a
 optical constants: Vol. III/41A1A 628III/41A1a
 carrier lifetimes, Auger coefficient, plasmons: Vol. III/41A1A 634III/41A1a
 deformation potentials: Vol. III/41A1A 648III/41A1a
 optical properties involving core level transitions: Vol. III/41A1A 652III/41A1a
 thermal conductivity: Vol. III/41A1A 664III/41A1a
 phonon frequencies: Vol. III/41A1A 670III/41A1a
 Hall scattering factor: Vol. III/41A1A 677III/41A1a
 energies of symmetry points of the band structure: Vol. III/41A1A 693III/41A1a
 Schottky barrier heights: Vol. III/41A1A 744III/41A1a
 internal strain, Young's, torsion and bulk moduli: Vol. III/41A1A 753III/41A1a
 g-factor of electrons: Vol. III/41A1A 774III/41A1a
 third order elastic moduli: Vol. III/41A1A 821III/41A1a
 elastic moduli of Si-I: Vol. III/41A1A 84III/41A1a
 phonon dispersion: Vol. III/41A1A 840III/41A1a
 plasma energy, energy loss: Vol. III/41A1A 854III/41A1a
 indirect energy gap: Vol. III/41A1A 857III/41A1a
 Young's modulus, torsion modulus, bulk modulus (various structures): Vol. III/41A1A 86III/41A1a
 spin-orbit splitting energies, second indirect gap: Vol. III/41A1A 866III/41A1a
 Debye temperature, heat capacity, density, hardness, melting point: Vol. III/41A1A 871III/41A1a
 sound velocities: Vol. III/41A1A 872III/41A1a
 sound attenuation, phonon viscosity tensor: Vol. III/41A1A 88III/41A1a
 mean square displacements: Vol. III/41A1A 95III/41A1a
 vibrational modes due to irradiation defects, general: Vol. III/41A2A 1001III/41A2a
 point defects: vacancies and interstitials: Vol. III/41A2A 1007III/41A2a
 vibrational modes of interstitial impurity complexes: Vol. III/41A2A 1008III/41A2a
 solubility data of impurities: group VIIIA: Vol. III/41A2A 1010III/41A2a
 photoionization cross-sections of impurity levels: Vol. III/41A2A 1011III/41A2a
 point defects: other impurities: Vol. III/41A2A 1013III/41A2a
 solubility data of impurities: group IIIB including rare earth elements: Vol. III/41A2A 1014III/41A2a
 solubility data of impurities: group IA: Vol. III/41A2A 1015III/41A2a
 solubility data of impurities: group IIA: Vol. III/41A2A 1017III/41A2a
 excited bound states of acceptors and donors: acceptors of group III impurities, general: Vol. III/41A2A 1018III/41A2a
 ionization energies and structural information on impurities: Th ... Zr: Vol. III/41A2A 1020III/41A2a
 excited bound states: acceptors of group II impurities: Vol. III/41A2A 1021III/41A2a
 vibrational modes:defect concentrations derived from the strengths of local absorption lines: Vol. III/41A2A 1022III/41A2a
 point defects: oxidation effects: Vol. III/41A2A 1023III/41A2a
 binding energies of ground and selected excited states of S-, Se-, and Te-related centers: Vol. III/41A2A 1024III/41A2a
 paramagnetic centers: principal values of g-tensors of orthorhombic-I centers: Vol. III/41A2A 1025III/41A2a
 vibrational modes of substitutional impurities: Vol. III/41A2A 1026III/41A2a
 ionization energies and structural information on impurities: Au ... Au-Vac: Vol. III/41A2A 1028III/41A2a
 solubility data of impurities: group IB: Vol. III/41A2A 1029III/41A2a
 properties of oxygen-related defects and microdefects, classification of defects: Vol. III/41A2A 876III/41A2a
 microdefects not related tooxygen: Vol. III/41A2A 880III/41A2a
 ionization energies and structural information on impurities: Mn ... Ni: Vol. III/41A2A 881III/41A2a
 vibrational modes due to hydrogen paired with metallic impurities: Vol. III/41A2A 882III/41A2a
 ionization energies and structural information on impurities: H ... Hf: Vol. III/41A2A 883III/41A2a
 point defects: diffusivity of impurities: Vol. III/41A2A 884III/41A2a
 paramagnetic centers: number of resonances: Vol. III/41A2A 886III/41A2a
 vibrational modes of substitutional impurity complexes: Vol. III/41A2A 887III/41A2a
 excited bound states of acceptors and donors: acceptors incorporating group II impurities: Vol. III/41A2A 888III/41A2a
 ionization energies of impurity levels, general: Vol. III/41A2A 889III/41A2a
 solubility data of impurities: group VIII (cobalt group): Vol. III/41A2A 891III/41A2a
 binding energies of even parity excited states of acceptors: Vol. III/41A2A 892III/41A2a
 excited bound states: pseudo-donors or pseudo-acceptors: Vol. III/41A2A 893III/41A2a
 binding energies of even parity excited states of donors: Vol. III/41A2A 894III/41A2a
 microdefects: self-point microdefects (swirl defects): Vol. III/41A2A 895III/41A2a
 ionization energies and structural information on impurities: Hg ... Mg: Vol. III/41A2A 896III/41A2a
 paramagnetic centers: principal values of g-tensors of tetragonal centers: Vol. III/41A2A 897III/41A2a
 photoluminescence properties of impurities and defects, general remarks: Vol. III/41A2A 898III/41A2a
 capture coefficients and capture cross-sections for impurities and defects: Vol. III/41A2A 899III/41A2a
 solubility data of impurities: group IIB: Vol. III/41A2A 900III/41A2a
 microdefects: gettering and denuded zones: Vol. III/41A2A 902III/41A2a
 point defects: equilibrium concentration and diffusivity for vacancies and interstitials: Vol. III/41A2A 904III/41A2a
 solubility data of impurities: group VIIB: Vol. III/41A2A 905III/41A2a
 microdefects: oxidation-induced stacking faults: Vol. III/41A2A 906III/41A2a
 solubility data of impurities: group VIII (group IIIA): Vol. III/41A2A 910III/41A2a
 ionization energies and structural information on impurities: O ... Pd-H: Vol. III/41A2A 912III/41A2a
 excited bound states of very shallow centers and deep transition metal defects: Vol. III/41A2A 913III/41A2a
 paramagnetic centers: principal values of g-tensors of cubic centers: Vol. III/41A2A 920III/41A2a
 solubility data of impurities: group VIII (nickel group): Vol. III/41A2A 921III/41A2a
 precipitation: Vol. III/41A2A 923III/41A2a
 photoluminescence spectroscopy using radioactive isotopes: Vol. III/41A2A 924III/41A2a
 ionization energies and structural information on impurities: Be ... Ce: Vol. III/41A2A 925III/41A2a
 excited bound states of acceptors and donors: group V donors, Lii related donors, and Mgi: Vol. III/41A2A 926III/41A2a
 ionization energies and structural information on impurities: Sb ... Te-Se: Vol. III/41A2A 928III/41A2a
 point defects: atomic size effects of impurities: Vol. III/41A2A 929III/41A2a
 solubility, segregation and distribution coefficients of impurities and defects, general: Vol. III/41A2A 930III/41A2a
 excitonic luminescence due to defects, mechanisms: Vol. III/41A2A 931III/41A2a
 point defects: carbon and oxygen: Vol. III/41A2A 932III/41A2a
 paramagnetic centers: principal values of g-tensors of trigonal centers: Vol. III/41A2A 934III/41A2a
 ionization energies and structural information on impurities: Ga ... Ge: Vol. III/41A2A 935III/41A2a
 photoluminescence data: supplementary data on optical defects: Vol. III/41A2A 937III/41A2a
 solubility data of impurities: group VIA: Vol. III/41A2A 938III/41A2a
 aggregation phenomena: Vol. III/41A2A 939III/41A2a
 photoluminescence data: hydrogen-related optical defects: Vol. III/41A2A 940III/41A2a
 microdefects: oxygen-related microdefects: Vol. III/41A2A 941III/41A2a
 distribution coefficients at the melting point: Vol. III/41A2A 942III/41A2a
 solubility data of impurities and native point defects: group IVA: Vol. III/41A2A 943III/41A2a
 point defects: solubility of impurities: Vol. III/41A2A 944III/41A2a
 solubility data of impurities: group VIB: Vol. III/41A2A 945III/41A2a
 excited bound states of shallow thermal donors (STDs): Vol. III/41A2A 946III/41A2a
 ionization energies and structural information on impurities: Co ... Cr-Zn: Vol. III/41A2A 949III/41A2a
 binding energies Ei and IR absorption line energies of singly ionized thermal donors (TD+): Vol. III/41A2A 951III/41A2a
 vibrational modes: hydrogen complexes with donor and acceptor dopants: Vol. III/41A2A 952III/41A2a
 further remarks to photoluminescence defect spectra: Vol. III/41A2A 953III/41A2a
 vibrational modes: fine structure due to silicon isotopes on 16O(i) absorption: Vol. III/41A2A 954III/41A2a
 photoluminescence data for bound excitons: Vol. III/41A2A 955III/41A2a
 ionization energies and structural information on impurities: A-center ... As4-Vac: Vol. III/41A2A 957III/41A2a
 excited bound states of thermal donors (TDs): Oxygen-related defects, general: Vol. III/41A2A 958III/41A2a
 paramagnetic centers: principal values and directions of the g-tensor: Vol. III/41A2A 959III/41A2a
 paramagnetic centers: principal values and orientations of g-tensors of triclinic centers: Vol. III/41A2A 960III/41A2a
 solubility data of impurities: group IVB: Vol. III/41A2A 961III/41A2a
 paramagnetic centers: principal values and orientations of g-tensors of monoclinic-I centers: Vol. III/41A2A 962III/41A2a
 paramangetic centers: principal values of g-tensors of orthorhombic-II centers: Vol. III/41A2A 963III/41A2a
 paramagnetic centers, general remarks: Vol. III/41A2A 965III/41A2a
 excited bound states of acceptors and donors: group III acceptors and acceptor-X centers: Vol. III/41A2A 966III/41A2a
 photoluminescence data: Er3+/-related luminescence in silicon: Vol. III/41A2A 967III/41A2a
 binding energies Ei and IR absorption line energies of neutral thermal donors (TD0): Vol. III/41A2A 968III/41A2a
 photoluminescence data on defect spectra: Vol. III/41A2A 969III/41A2a
 solubility data of impurities: group VB: Vol. III/41A2A 970III/41A2a
 ionization energies and structural information on impurities: B ... B-Zn: Vol. III/41A2A 971III/41A2a
 paramagnetic centers: effective g-values: Vol. III/41A2A 972III/41A2a
 paramagnetic centers: symmetry-imposed constraints on the elements of the Cartesian g-tensor: Vol. III/41A2A 973III/41A2a
 ionization energies: pressure coefficients of impurity levels: Vol. III/41A2A 977III/41A2a
 paramagnetic centers: principal values and orientations of g-tensors of monoclinic-II centers: Vol. III/41A2A 978III/41A2a
 excited bound states of acceptors and donors: donors of group VI impurities, general: Vol. III/41A2A 980III/41A2a
 solubility data of impurities: group VA: Vol. III/41A2A 981III/41A2a
 ionization energies and structural information on impurities: Cu ... Fe-Zn: Vol. III/41A2A 984III/41A2a
 photoluminescence properties of excitons bound to neutral acceptors or donors: Vol. III/41A2A 985III/41A2a
 paramagnetic centers: summary of crystallographic systems and pointgroups: Vol. III/41A2A 986III/41A2a
 solubility data of impurities: group VIII (iron group): Vol. III/41A2A 987III/41A2a
 vibrational modes: hydrogen atoms and molecules: Vol. III/41A2A 988III/41A2a
 vibrational modes of oxygen in Si: Vol. III/41A2A 989III/41A2a
 ionization energies and structural information on impurities: Pt ... S-Vac: Vol. III/41A2A 992III/41A2a
 paramagnetic centers: degeneracies of the elements of the g-tensor: Vol. III/41A2A 993III/41A2a
 capture coefficients and cross-sections of impurity levels, general: Vol. III/41A2A 995III/41A2a
 vibrational modes: experimental parameters of the Oi modes: Vol. III/41A2A 996III/41A2a
 vibrational modes of hydrogen bonded to radiation damage defects: Vol. III/41A2A 998III/41A2a
 excited bound states of acceptors and donors: donors of group V impurities and Li, general: Vol. III/41A2A 999III/41A2a

Spectroscopic Methods

 Nuclear quadrupole resonance data tables: Deuterium: Vol. III/39 3.2:1-169III/39

Thermodynamic Properties

 Thermodynamic Properties of Elements, S7 to Ti: Vol. IV/19a1 p.110IV/19A1
 Diagrams of Gibbs Energies and Heat Capacities · SGTE Data for Pure Elements: Vol. IV/19b1 p.25IV/19B1

NIMS Citations:

 Element PropertiesCALDB

References

III/14a
Short: III/14a
Title: Structure Data of Elements and Intermetallic Phases: Elements, Borides, Carbides, Hydrides
Author: Eisenmann, B.; Schäfer, H.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/14a
Year: 1988
ISBN: 3-540-17814-7
ISBN: 978-3-540-17814-9
Internet Resource: DOI:10.1007/b31112
RefComment: 265 figs., XXV, 458 pages. Hardcover
III/21d
Short: III/21d
Title: Superconductors: Transition Temperatures and Characterization Of Elements, Alloys and Compounds: Se ... Ti
Author: Brown, H.F.; Flükiger, R.; Giorgi, A.L.; Kaner-Henzel, N.; Küntzler, H.; Luo, H.L.; Müller, M.; Müller, R.; Sosnowski, J.; Wolf, T.; Xu, J.Q.
Editor: Flükiger, R.; Klose, W.
Source: Landolt-Börnstein, New Series
Volume: III/21d
Year: 1998
ISBN: 3-540-56048-3
ISBN: 978-3-540-56048-7
Internet Resource: DOI:10.1007/b47747
RefComment: XXX, 356 pages. Hardcover
Abstract: In volume III/21 an attempt is made to compile the reported data on superconducting materi-als, from the discovery of this phenomenon to the present day. The data comprise various modifications of a material, e.g. bulk state, thin films,implanted films, filamentary wires and others. Where available,data obtained under high pressure or after high energy particle irradia-tion are also tabulated. The goal of this volume is to establish a complete and reliable compilation of critically reviewed experimental data, excluding pure theoretical work. A particular effort was made to present not only superconducting data for a given substance, but also the complete characterization of the analysed sample. The large number of publications, more than 40,000 since 1913, requires a subdivision of the data in several subvolumes.
III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/29a
Short: III/29a
Title: Low Frequency Properties of Dielectric Crystals: Second and Higher Order Elastic Constants
Author: Every, A.G.; McCurdy, A.K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29a
Year: 1992
ISBN: 3-540-54410-0
ISBN: 978-3-540-54410-4
Internet Resource: DOI:10.1007/b44185
RefComment: 890 figs., XIV, 743 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The first subvolume III/29a contains exclusively second and higher order elastic constants including temperature and pressure coefficients.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/39
Short: III/39
Title: Nuclear Quadrupole Resonance Spectroscopy Data
Author: Chihara, H.; Nakamura, N.
Editor: Chihara, H.
Source: Landolt-Börnstein, New Series
Volume: III/39
Year: 1997
Keyword: NQR; spectroscopy
ISBN: 3-540-62428-7
ISBN: 978-3-540-62428-8
Internet Resource: DOI:10.1007/b61951
RefComment: VIII, 424 pages. Hardcover
Abstract: Volume III/39 continues the compilation of nuclear quadrupole resonance spectroscopy data of solid substances which started in with volumes III/20 and III/31. The literature from the beginning of nuclear quadrupole resonance spectroscopy in 1951 to 1996 is covered. In total there are more than 10.000 substances in the volumes, showing the scope and significance of nuclear quadrupole resonance spectroscopy up to recent times. Volume III/39 can be consulted without recourse to its predecessor because the complete introduction and general tables are repeated from III/20 and III/31.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
IV/19A1
Short: IV/19A1
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 1: Elements and Compounds from AgBr to Ba3N2
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A1
Year: 1999
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-64734-1
ISBN: 978-3-540-64734-8
Internet Resource: DOI:10.1007/b68802
RefComment: LVII, 405 pages, with CD-ROM, Hardcover
IV/19B1
Short: IV/19B1
Title: Thermodynamic Properties of Inorganic Materials: Binary Systems. Part 1: Elements and Binary Systems from Ag-Al to Au-Tl
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19B1
Year: 2002
Internet Resource: DOI:10.1007/b68942
VIII/3C
Short: VIII/3C
Title: Energy Technologies: Renewable Energy
Author: Bandi, A.; Bogenrieder, W.; Braitsch, W.; Clauser, C.; Dafu, Y.; Fisch, M.N.; Gökler, G.; Goetzberger, A.; Haas, H.; Hein, D.; Heinloth, K.; Huckemann, V.; Karl, J.; Laue, H.J.; Neumann, A.; Pürer, E.; Richter, S.; Rosillo-Calle, F.; Shuqing, W.; Song, Won-Oh; Specht, M.; Strobl, Th.; van Walsum, W.; Wagner, H.J.; Wagner, U.; Ziqin, T.; Zunic, F.
Editor: Heinloth, K.
Source: Landolt-Börnstein, New Series
Volume: VIII/3C
Page: 1-626
Year: 2006
ISBN: 978-3-540-42962-3
ISBN: 3-540-42962-X
RefComment: 408 figs., XXIII
CALDB
Short: CALDB
Title: Electronic Structure Database
Author: National Institute for Materials Science (NIMS)
Year: 2007
Keyword: FLAPW (Full potential Linear Augmented Plane Wave); STATE (Simulation Tool for Atom TEchnology, a Car-Parrinello type MD) calculations;
Internet Resource: http://caldb.nims.go.jp/
EINECS2
Short: EINECS2
Title: Corrigendum to the Commission communication pursuant to Article 13 of Council Directive 67/548/EEC of 27 June 1967 on the approximation of the laws, regulations and administrative provisions relating to the classification, packaging and labelling of dangerous substances, as amended by Directive 79/831/EEC - Einecs (European inventory of existing commercial chemical substances)
Source: Official Journal of the European Communities
Volume: C 54 (01.03.2002)
Page: 13-27
Year: 2002
Publish_Date: 2002/03/01

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