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Cd3As2

Compound Descriptions:

Element System:As-Cd
Element Names:Arsenic, Cadmium
Name(s):Cd3As2
Cadmium arsenide (-III)
As2Cd3
Cadmium arsenide (Cd3As2)
Tricadmium diarsenide
arsenic cadmiumide (As2Cd3)
Cadmiumarsenid (Cd3As2)
CAS-RN:12006-15-4, 130917-47-4
EINECS:234-484-1 EINECS

European Regulations

4 matching entries in european regulations: Hazard, REACH, ECHA-pre, RoHS

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

Semiconductors

 sound velocities, further lattice properties: Vol. III/41C 2158III/41C
 crystal structure and chemical bond, lattice parameters: Vol. III/41C 2247III/41C
 Debye temperature, heat capacity, density, melting point: Vol. III/41C 2292III/41C
 carrier concentration, resistivity, carrier mobility: Vol. III/41C 2382III/41C
 parameters of vaporization, heats of dissociation, formation, sublimation, fusion: Vol. III/41C 2535III/41C
 interband and splitting band energies: Vol. III/41C 2706III/41C
 entropies, enthalpies, free energy: Vol. III/41C 2712III/41C
 thermoelectric power, further transport parameters: Vol. III/41C 2836III/41C
 thermal expansion: Vol. III/41C 2849III/41C
 phase transitions: Vol. III/41C 2906III/41C
 impurities and defects: Vol. III/41C 2929III/41C
 Dingle temperature, quantum oscillations: Vol. III/41C 2999III/41C
 some data on technical applications: Vol. III/41C 3020III/41C
 optical properties, dielectric constants: Vol. III/41C 3022III/41C
 Fermi surfaces, Fermi energy: Vol. III/41C 3059III/41C
 effective masses: Vol. III/41C 3103III/41C
 thin and amorphous films: Vol. III/41C 3205III/41C
 magnetoresistiance, piezoresistance: Vol. III/41C 3208III/41C
 band structure, general: Vol. III/41C 3253III/41C
 g-factor, further band parameters: Vol. III/41C 3290III/41C
 near gap valence band structure, energy gap: Vol. III/41C 3387III/41C
 thermal conductivity, Lorenz number, thermoelectrical figure of merit: Vol. III/41C 3439III/41C

References

III/41C
Short: III/41C
Title: Semiconductors: Non-Tetrahedrally Bounded Elements and Binary Compounds I
Author: Clasen, R.; Grosse, P.; Krost, A.; Lévy, F.; Marenkin, S.F.; Richter, W.; Ringelstein, N.; Schmechel, R.; Weiser, G.; Werheit, H.; Yao, M.; Zdanowicz, W.
Editor: Madelung, O.
Source: Landolt-Börnstein, New Series
Volume: III/41C
Year: 1998
Keyword: semiconductors
ISBN: 3-540-64583-7
ISBN: 978-3-540-64583-2
Internet Resource: DOI:10.1007/b71138
RefComment: XIV, 470 pages. Hardcover
Abstract: Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of todays scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

  File created on 2009/18/08 by LCI Publisher GmbH (Gaja Peters, Inga Thede, Volkmar Vill, Ron Zenczykowski)
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