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Element System |
GaTl
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| Formula: | GaTl | |
| Element System: | Ga-Tl | |
| Element Names: | Gallium, Thallium | |
| Molecular Weight: | 274.106 g/mol | |
| Name(s): | GaTl | |
European Regulations| Resistivity/atomic percent impurity in dilute alloys: Table 1: host metal Ga - Zr: Vol. III/15A 1.4.1, p.181 | III/15a | |
| Resistivity/atomic percent impurity in dilute alloys: Figs. 94 - 180: Vol. III/15A 1.4.1, p.224 | III/15a | |
| Electrical resistivity in Dilute alloys: Application of modified Linde's law: Vol. III/15A 1.4.2, p.256 | III/15a |
References| III/15a |
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Short: III/15a
Title: Metals: Electronic Transport Phenomena: Electrical Resistivity, Kondo and Spin Fluctuation Systems, Spin Glasses and Thermopower
Author: Bass, J.; Fischer, K.H.
Editor: Hellwege, K.-H.; Olsen, J.L.
Source: Landolt-Börnstein, New Series
Volume: III/15a
Year: 1982
ISBN: 3-540-11082-8
ISBN: 978-3-540-11082-8
Internet Resource: DOI:10.1007/b29240
RefComment: 875 figs., VIII, 396 pages. Hardcover
Abstract: The first two subvolumes of volume III/15 contain data on electrical transport in metals. Both experimental and theoretical results published up to 1981 have been included. In the third subvolume data on thermal - predominantly electronic - transport of pure metals and alloys are presented, the literature up to 1989 has been taken into account.
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File created on 2009/18/08 by LCI Publisher GmbH (Gaja Peters, Inga Thede, Volkmar Vill, Ron Zenczykowski)
© 2009 Landolt Börnstein, Springer-Verlag Berlin Heidelberg
