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silicon carbide (CSi)

Compound Descriptions:

Structure Drawing
Formula:CSi
Element System:C-Si
Element Names:Carbon, Silicon
Molecular Weight:40.096 g/mol
Name(s):silicon carbide
SiC
Silicon carbide (SiC)
100FT
37C150
A 20
A 20 (carbide)
Annanox CK
Betarundum
Betarundum ST-S
Betarundum UF
Betarundum Ultrafine
BSC 059
Carbofrax M
Carbogran F 180
Carbogran F 36
Carbogran F 80
Carbogran UF 15
Carbogran UF 45
Carbon silicide
Carborundum
CP 240
CP 400
Crystar
Crystolon 37
Crystolon 39
Crystolon B
Densic 120
Densic 180
Densic 220
Densic 60
Densic 80
Densic C 150
Densic C 500
Densic C 600
Densic RC 31
DU-A 1
DU-A 2
DU-A 3
DU-A 3C
DU-A 4
F 120
F 20
F 20 (abrasive)
F 500
FCP 13NLC
FCP 15
GC 10000
GMF 6S
GP 600
GP 600 (abrasive)
Green Densic
Green Densic GC 800
Siliciumcarbid
Silicon carbide SiC
Silica graphite
Silicon carbide whiskers
Silicon carbide α
Silicon carbide β
CAS-RN:409-21-2, 12504-67-5, 37231-85-9, 54500-13-9, 63686-94-2, 66039-27-8, 76647-55-7, 78544-49-7, 84149-55-3, 86755-24-0, 92843-12-4, 145583-77-3, 146915-55-1, 148031-02-1, 152024-73-2, 154643-50-2, 156131-38-3, 160073-05-2, 167972-08-9, 215780-01-1
EINECS:206-991-8 EINECS
Classification:no charge; 1fragment

European Regulations

1 matching entries in european regulations: ECHA-pre

Derivatives / Analogues

Analogueother group IV element: Dicarbon 
Analogueother group IV element: Acetylene-d2 
Analogueother group IV element: Ethene-d4 
Analogueother group IV element: Ethene-d4 homopolymer 
Analogueother group IV element: Ethane-d6 
Analogueother group IV element: Si2 
Analogueother group IV element: Sn2 

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

Electrical Properties

 Elastic constants of second order: Elastic constants s, c: Vol. III/29a 1.2.1. p.132III/29a
 Elastic constants of second order: Table 11. Hexagonal system: Vol. III/29a 1.2.1. p.122III/29a
 Elastic constants of second order: Elastic constants s, c: Vol. III/29a 1.2.1. p.76III/29a
 Elastic constants of second order: Figures: Vol. III/29a 1.3. p.450III/29a
 General data of piezoelectric substances: General data on crystals, ceramics and polymers: Vol. III/29b 3.2. p.38III/29b
 Dielectric constants of piezoelectric substances: Tables of relative dielectric constants (numeric): Vol. III/29b 3.3.6. p.51III/29b
 Electromechanical coupling factors: Tables of piezoelectric constants: Vol. III/29b 3.5.5. p.107III/29b
 Piezooptic, elastooptic, rotooptic coefficients: Piezooptic and elastooptic coefficients: Vol. III/30a 5.2.2.3. p.57III/30A
 Piezooptic, elastooptic, rotooptic coefficients: Figures: Vol. III/30a 5.2.4. p.135III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.1. p.172III/30A
 Index of refraction: Indices of refraction and Sellmeier coefficients: Vol. III/30a 5.3.4.7. p.240III/30A
 Index of refraction: Indices of refraction and Sellmeier coefficients: Vol. III/30a 5.3.4.8. p.241III/30A
 Index of refraction: Indices of refraction and Sellmeier coefficients: Vol. III/30a 5.3.4.2. p.236III/30A
 Nonlinear dielectric susceptibility: Hexagonal: Vol. III/30b 6.5.2.2. p.41III/30B
 Nonlinear dielectric susceptibility: Data on crystals (alphabetically ordered substance names): Vol. III/30b 6.7. p.277III/30B

Electronic Properties

Semiconductors

 low-frequency dielectric constant: Vol. III/41A1A 116III/41A1a
 thermal conductivity: Vol. III/41A1A 123III/41A1a
 effective charges: Vol. III/41A1A 124III/41A1a
 elastic moduli: Vol. III/41A1A 129III/41A1a
 mode Grüneisen parameters: Vol. III/41A1A 140III/41A1a
 phase transition pressure and volume change: Vol. III/41A1A 145III/41A1a
 mean square displacements: Vol. III/41A1A 168III/41A1a
 high-frequency dielectric constant: Vol. III/41A1A 189III/41A1a
 sound velocity: Vol. III/41A1A 198III/41A1a
 phonon wavenumbers and frequencies: Vol. III/41A1A 2III/41A1a
 bulk modulus, Youngs modulus, shear modulus: Vol. III/41A1A 207III/41A1a
 Raman phonon wavenumbers: Vol. III/41A1A 219III/41A1a
 phonon spectra, coupled phonon-plasmon modes: Vol. III/41A1A 227III/41A1a
 phonon dispersion relations, density of states: Vol. III/41A1A 234III/41A1a
 structure, equation of state: Vol. III/41A1A 252III/41A1a
 piezoelectric and related constants: Vol. III/41A1A 27III/41A1a
 electron drift velocity, breakdown field: Vol. III/41A1A 281III/41A1a
 non-linear low frequency susceptibility, third-order susceptibility: Vol. III/41A1A 33III/41A1a
 dielectric constants, nonlinear optics: Vol. III/41A1A 350III/41A1a
 mode Grüneisen parameters, sound velocity, elastic moduli, etc.: Vol. III/41A1A 396III/41A1a
 phonon dispersion, phonon frequencies and wavenumbers: Vol. III/41A1A 454III/41A1a
 band structure, energy gaps: Vol. III/41A1A 473III/41A1a
 polytypes: Vol. III/41A1A 500III/41A1a
 effective masses: Vol. III/41A1A 531III/41A1a
 work function: Vol. III/41A1A 541III/41A1a
 crystal structure, unit cells, chemical bond, high pressure phases: Vol. III/41A1A 557III/41A1a
 Debye temperature, density, hardness, melting point, thermodyn. functions: Vol. III/41A1A 609III/41A1a
 lattice parameters: Vol. III/41A1A 62III/41A1a
 refractive index, absorption coefficient, optical spectra: Vol. III/41A1A 658III/41A1a
 internal strain: Vol. III/41A1A 68III/41A1a
 magnetic properties: Vol. III/41A1A 725III/41A1a
 thermal expansion: Vol. III/41A1A 77III/41A1a
 lattice parameters, thermal expansion: Vol. III/41A1A 775III/41A1a
 exciton binding energy, spin-orbit splitting and interband transition energies: Vol. III/41A1A 790III/41A1a
 carrier concentration, resistivity, mobilities: Vol. III/41A1A 796III/41A1a
 valence band parameters, deformation potentials: Vol. III/41A1A 817III/41A1a
 thermal conductivity: Vol. III/41A1A 858III/41A1a
 solubility of impurities: Vol. III/41A2A 1078III/41A2a
 optical properties of impurities and other defects: rare earth elements: erbium: Vol. III/41A2A 1082III/41A2a
 impurities and defect levels, general: Vol. III/41A2A 1100III/41A2a
 optical properties of impurities and other defects: hydrogen: Vol. III/41A2A 1122III/41A2a
 optical properties of impurities and other defects: acceptors Al, Ga, B and Be: Vol. III/41A2A 1143III/41A2a
 diffusion of impurities: Vol. III/41A2A 1154III/41A2a
 optical properties of impurities and other defects: shallow donors: Vol. III/41A2A 1151III/41A2a
 optical properties of impurities and other defects associated with radiation damage, misc. defects: Vol. III/41A2A 1152III/41A2a
 defects in SiC: Vol. III/41A2A 1186III/41A2a
 general characterization: Vol. III/41A2A 1188III/41A2a
 stacking order and number of inequivalent lattice sites in SiC: Vol. III/41A2A 1215III/41A2a
 energy levels and capture cross sections, defect centers not identified: Vol. III/41A2A 1220III/41A2a
 optical properties of impurities and other defects: transition metals: Vol. III/41A2A 1222III/41A2a
 energy levels and capture cross sections, identified defect centers: Vol. III/41A2A 1232III/41A2a

Structure and Molecular Constants

 Molecular Constants Mostly From Microwave, Molecular Beam, Electro Spin Resonance and Sub-Doppler Laser Spectroscopy: Vol. II/19d1 3.1.6.2:3II/19D1
 Molecular Constants Mostly From Microwave, Molecular Beam, Electro Spin Resonance and Sub-Doppler Laser Spectroscopy: Vol. II/24a 2.2.2:70II/24A

References

II/19D1
Short: II/19D1
Title: Molecular Constants: Diatomic Radicals and Ions
Author: Tiemann, E.
Editor: Hüttner, W.
Source: Landolt-Börnstein, New Series
Volume: II/19D1
Year: 1995
Keyword: organic compounds; molecular constants; spectroscopy; microwave spectroscopy; radicals
ISBN: 3-540-55462-9
ISBN: 978-3-540-55462-2
Internet Resource: DOI:10.1007/b44676
RefComment: VIII, 208 pages.
Abstract: Volume II/19 is a supplement to the previous published volumes II/4, II/6 and II/14. The slight change in the title of the series reflects current trends in the applications of spectroscopic methods. The four volumes II/4, II/6, II/14 and II/19 together comprise a comprehensive collection of critically evaluated data on constants of free molecules obtained by classical and modern spectroscopy which have appeared in the literature until 1989/1990. The present subvolume 19d1 provides critically evaluated data which have appeared in the literature up to 1991/92. Subvolume II/19d3 provides a substance index for all volumes II/4, II/6, II/14 and II/19.
II/24A
Short: II/24A
Title: Molecular Constants mostly from Microwave, Molecular Beam, and Sub-Doppler Laser Spectroscopy: Rotational, l-type, Centrifugal Distortion and Related Constants of Diamagnetic Diatomic, Linear, and Symmetric Top Molecules
Author: Demaison, J.; Hübner, H.; Wlodarczak, G.
Editor: Hüttner, W.
Source: Landolt-Börnstein, New Series
Volume: II/24A
Year: 1998
Keyword: Diamagnetics Diatomics; Linear Symmetric Rotors; Molecular Constants; Molecules
ISBN: 3-540-63267-0
ISBN: 978-3-540-63267-2
Internet Resource: DOI:10.1007/b60165
RefComment: VIII, 286 pages. Hardcover
Abstract: Volume II/24 presents the spectroscopic data on diamagnetic and paramagnetic molecules as well as on molecular ions and radicals up to date considering the publications up to and partly including 1997. The spectroscopic information collected in this volume has been obtained principally from gas phase microwave measurements. Volume II/24 is a supplement to volumes II/4, II/6, II/14, and II/19 and is planned to appear in five subvolumes, the last of which will contain the substance index taking into account all molecules worked at since 1967 in the volumes mentioned and will provide cross references to and between all tables of these. The present subvolume II/24A contains the general introduction and tables of rotational and centrifugal distortion constants of diamagnetic diatomic, linear and symmetric-top molecules, i.e. data which roughly specifies the frequencies of the rotational transitions of these types of rotors.
III/14a
Short: III/14a
Title: Structure Data of Elements and Intermetallic Phases: Elements, Borides, Carbides, Hydrides
Author: Eisenmann, B.; Schäfer, H.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/14a
Year: 1988
ISBN: 3-540-17814-7
ISBN: 978-3-540-17814-9
Internet Resource: DOI:10.1007/b31112
RefComment: 265 figs., XXV, 458 pages. Hardcover
III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/29a
Short: III/29a
Title: Low Frequency Properties of Dielectric Crystals: Second and Higher Order Elastic Constants
Author: Every, A.G.; McCurdy, A.K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29a
Year: 1992
ISBN: 3-540-54410-0
ISBN: 978-3-540-54410-4
Internet Resource: DOI:10.1007/b44185
RefComment: 890 figs., XIV, 743 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The first subvolume III/29a contains exclusively second and higher order elastic constants including temperature and pressure coefficients.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

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