LBOI
Landolt-Boernstein Search
  Home  |   Search  |   Indices  |   Indexed Volumes  
scidex
  
   
   
   
  
   
 Help
   No Results
Text Search:

Galliumphosphid (GaP)

Compound Descriptions:

Structure Drawing
Formula:GaP
Element System:Ga-P
Element Names:Phosphorus, Gallium
Molecular Weight:100.697 g/mol
Name(s):Galliumphosphid
GaP
Gallium phosphide
Gallium Monophosphide
CAS-RN:12063-98-8
EINECS:235-057-2 EINECS
Classification:no charge; 2fragments; ionic

European Regulations

1 matching entries in european regulations: ECHA-pre

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

 Binary and ternary phosphides: GaP (II): Vol. III/7C2 VII.1.2.1:1189III/7c2
 bulk structure and bulk lattice parameter(s): Vol. III/24c 1.6, p.22III/24C
 bulk structure and bulk lattice parameter(s): Vol. III/24d 1.6, p.22III/24D
 bulk structure and bulk lattice parameter(s): Vol. III/24a 1.6, p.22III/24a
 bulk structure and bulk lattice parameter(s): Vol. III/24b 1.6, p.22III/24b
 surface phonon-polariton dispersion curve(s) (unspecified surface): Vol. III/24b 4.2.2.1, p.489III/24b
 Table of the structures of intermetallic phases and phases similar to alloys: CrNiSe - GeLaS: GaLiSi - GaVCO: Vol. III/6 4.1:77, p.599III/6

Electrical Properties

 Elastic constants of second order: Elastic constants s, c: Vol. III/29a 1.2.1. p.70III/29a
 Elastic constants of second order: Temperature coefficients Tc: Vol. III/29a 1.2.2. p.238III/29a
 Elastic constants of second order: Pressure coefficients Pc: Vol. III/29a 1.2.3. p.277III/29a
 Elastic constants of second order: Figures: Vol. III/29a 1.3. p.379III/29a
 Elastic constants of third and higher order: Tables of third-order stiffnesses: Vol. III/29a 2.2. p.648III/29a
 General data of piezoelectric substances: General data on crystals, ceramics and polymers: Vol. III/29b 3.2. p.22III/29b
 Dielectric constants of piezoelectric substances: Tables of relative dielectric constants (numeric): Vol. III/29b 3.3.2. p.47III/29b
 Piezoelectric constants: Tables of piezoelectric constants: Vol. III/29b 3.5.1. p.102III/29b
 Piezooptic, elastooptic, rotooptic coefficients: Cubic system: Classes (-4)3m (T{d}), 432 (O), m3m (O{h}): Vol. III/30a 5.2.2.1. p.26III/30A
 Piezooptic, elastooptic, rotooptic coefficients: Figures: Vol. III/30a 5.2.4. p.99III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.1. p.171III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.2. p.174III/30A
 Index of refraction: Indices of refraction and Sellmeier coefficients: Vol. III/30a 5.3.4.2. p.235III/30A
 Linear and quadratic electrooptic coefficients: Figures: Vol. III/30a 5.3.7. p.298III/30A
 Nonlinear dielectric susceptibility: Cubic: Vol. III/30b 6.5.1.1. p.39III/30B
 Nonlinear dielectric susceptibility: Data on crystals (alphabetically ordered substance names): Vol. III/30b 6.7. p.154III/30B

Electronic Properties

 Band structure and core levels of tetrahedrally-bonded semiconductors: GaP: Vol. III/23a 2.1.14. p.43-47III/23a

Semiconductors

 sound velocities, second- and third-order elastic moduli: Vol. III/41A1A 125III/41A1a
 internal strain, effective charges: Vol. III/41A1A 17III/41A1a
 dielectric constants: Vol. III/41A1A 176III/41A1a
 phonon frequencies and wavenumbers: Vol. III/41A1A 18III/41A1a
 Grüneisen parameters, phonon eigenvectors, mean square displacements: Vol. III/41A1A 194III/41A1a
 bulk modulus, Young's and torsional modulus: Vol. III/41A1A 237III/41A1a
 lattice parameters, thermal expansion: Vol. III/41A1A 248III/41A1a
 piezoelectric and electrooptic parameters, second- and third-order susceptibility: Vol. III/41A1A 256III/41A1a
 elastic moduli: Vol. III/41A1A 288III/41A1a
 conduction and valence band, effective masses: Vol. III/41A1A 299III/41A1a
 interband transition and splitting energies: Vol. III/41A1A 304III/41A1a
 band structure: Vol. III/41A1A 306III/41A1a
 Young's moduli and torsional modulus: Vol. III/41A1A 319III/41A1a
 second order nonlin. dielectric susceptibilities, birefringence, etc.: Vol. III/41A1A 334III/41A1a
 further optical properties: Vol. III/41A1A 342III/41A1a
 transverse effective charge: Vol. III/41A1A 347III/41A1a
 third order elastic moduli: Vol. III/41A1A 348III/41A1a
 indirect band gaps: Vol. III/41A1A 353III/41A1a
 optical properties involving core level transitions: Vol. III/41A1A 378III/41A1a
 thermodynamical data, vaporization: Vol. III/41A1A 390III/41A1a
 hole concentration and mobility: Vol. III/41A1A 399III/41A1a
 magnetic properties: Vol. III/41A1A 406III/41A1a
 data from angle integrated photoemission: Vol. III/41A1A 419III/41A1a
 minority carrier and positron lifetimes, plasmon energy: Vol. III/41A1A 426III/41A1a
 phonon self energy, phonon line shift and width: Vol. III/41A1A 43III/41A1a
 critical points of phonon dispersion curves: Vol. III/41A1A 458III/41A1a
 optical constants: Vol. III/41A1A 463III/41A1a
 camel's back structure of conduction band, effective masses: Vol. III/41A1A 470III/41A1a
 deformation potentials: Vol. III/41A1A 478III/41A1a
 structure, equation of state, specific heat: Vol. III/41A1A 49III/41A1a
 electron concentration and mobility: Vol. III/41A1A 517III/41A1a
 phonon dispersion, phonon frequencies: Vol. III/41A1A 540III/41A1a
 energy gaps, temperature and pressure dependence: Vol. III/41A1A 545III/41A1a
 magnetoresistance, Seebeck coefficient: Vol. III/41A1A 574III/41A1a
 crystal structure of various phases: Vol. III/41A1A 595III/41A1a
 exciton ground state: Vol. III/41A1A 596III/41A1a
 phase transition parameters: Vol. III/41A1A 6III/41A1a
 pressure dependence of elastic moduli: Vol. III/41A1A 692III/41A1a
 direct energy gap: Vol. III/41A1A 700III/41A1a
 energies of symmetry points of the band structure: Vol. III/41A1A 701III/41A1a
 bulk modulus, mode Grüneisen parameters and related data: Vol. III/41A1A 704III/41A1a
 valence band parameters: Vol. III/41A1A 722III/41A1a
 phonon dispersion, density of states: Vol. III/41A1A 75III/41A1a
 lattice parameter, thermal expansion, Grüneisen parameters: Vol. III/41A1A 766III/41A1a
 Debye temeprature, density, hardness, heat capacity: Vol. III/41A1A 807III/41A1a
 transport mechanisms, electrical and thermal conductivity: Vol. III/41A1A 814III/41A1a
 refractive index, absorption, reflection, dielectric constants: Vol. III/41A1A 816III/41A1a
 sound velocities: Vol. III/41A1A 827III/41A1a
 piezoelectric coefficients: Vol. III/41A1A 844III/41A1a
 binding energies of acceptors relative to the valence band maximum: Vol. III/41A2A 1031III/41A2a
 irradiation effects in rare earths doped GaP: Vol. III/41A2A 1032III/41A2a
 excited states of defects accociated with transition metal impurities: Vol. III/41A2A 1036III/41A2a
 J - J coupling and crystal field splittings of bound excitons: Vol. III/41A2A 1040III/41A2a
 optical properties of deep defects: optical absorption bands: Vol. III/41A2A 1041III/41A2a
 vibrational modes of impurities and defects: Vol. III/41A2A 1044III/41A2a
 excited states of donors: Vol. III/41A2A 1045III/41A2a
 solubility and diffusion of impurities: Vol. III/41A2A 1048III/41A2a
 energies and capture cross sections of hole traps: Vol. III/41A2A 1049III/41A2a
 excited states of acceptors: Vol. III/41A2A 1050III/41A2a
 deformation potential of impurity states: Vol. III/41A2A 1052III/41A2a
 ESR, ENDOR, and ODMR data: gallium vacancy: Vol. III/41A2A 1059III/41A2a
 optical properties related to transition metal complexes: Vol. III/41A2A 1068III/41A2a
 localization energies of bound excitons: Vol. III/41A2A 1080III/41A2a
 magnetic properties and ESR of transition metal impurities complexes: Vol. III/41A2A 1081III/41A2a
 scattering cross-sections s for the no-phonon creation of free excitons: Vol. III/41A2A 1084III/41A2a
 shallow impurities, general remarks: Vol. III/41A2A 1085III/41A2a
 optical properties of isolated, substitutional transition metal impurities: Vol. III/41A2A 1088III/41A2a
 energies and capture cross sections of electron traps: Vol. III/41A2A 1090III/41A2a
 ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(3) Y: Vol. III/41A2A 1094III/41A2a
 localization energies and splitting of excitons bound to acceptors: Vol. III/41A2A 1098III/41A2a
 vibrational modes of substitutional impurity complexes: Vol. III/41A2A 1109III/41A2a
 binding energies of donors: Vol. III/41A2A 1111III/41A2a
 transition lifetimes of bound excitons: Vol. III/41A2A 1119III/41A2a
 spin-orbit coupling in bound hole states: Vol. III/41A2A 1127III/41A2a
 ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(4): Vol. III/41A2A 1131III/41A2a
 ESR and ENDOR data for shallow impurities: Vol. III/41A2A 1133III/41A2a
 bound excitons, general remarks: Vol. III/41A2A 1140III/41A2a
 properties of deep defect states induced by high energy irradiation: Vol. III/41A2A 1145III/41A2a
 localization energies and splitting of excitons bound to donors: Vol. III/41A2A 1147III/41A2a
 defect levels associated with transition metal impurities: energy levels: Vol. III/41A2A 1148III/41A2a
 defect levels associated with transition metal impurities: capture and emission data: Vol. III/41A2A 1149III/41A2a
 excitons bound to isoelectronic substituents and other neutral centers, general remarks: Vol. III/41A2A 1150III/41A2a
 properties of rare earth impurities: Vol. III/41A2A 1157III/41A2a
 deep defects, general remarks: Vol. III/41A2A 1168III/41A2a
 splittings of 1S donor ground states: Vol. III/41A2A 1173III/41A2a
 ESR data of shallow acceptors: Vol. III/41A2A 1183III/41A2a
 ESR, ENDOR, and ODMR data: electron-irradiated GaP:Fe: Vol. III/41A2A 1185III/41A2a
 localization energies of multiple bound excitons: Vol. III/41A2A 1191III/41A2a
 nitrogen-related electron traps in GaP: Vol. III/41A2A 1195III/41A2a
 vibrational modes of irradiation defects: Vol. III/41A2A 1199III/41A2a
 magnetic properties and ESR of isolated, substitutional transition metal impurities: Vol. III/41A2A 1200III/41A2a
 properties of electron and hole traps induced by proton irradiation: Vol. III/41A2A 1203III/41A2a
 vibrational modes of hydrogen paired with impurity atoms: Vol. III/41A2A 1204III/41A2a
 optical properties of deep defects: luminescence bands: Vol. III/41A2A 1223III/41A2a

Thermodynamic Properties

 Elements and inorganic compounds: Ag2HgJ4 - K2PtBr6: Vol. IV/4 7.2.1:994, p.291IV/4
 Thermodynamic Properties of Compounds, Fe2I6 to GeI4: Vol. IV/19a3 p.388IV/19A3

References

III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/29a
Short: III/29a
Title: Low Frequency Properties of Dielectric Crystals: Second and Higher Order Elastic Constants
Author: Every, A.G.; McCurdy, A.K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29a
Year: 1992
ISBN: 3-540-54410-0
ISBN: 978-3-540-54410-4
Internet Resource: DOI:10.1007/b44185
RefComment: 890 figs., XIV, 743 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The first subvolume III/29a contains exclusively second and higher order elastic constants including temperature and pressure coefficients.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/6
Short: III/6
Title: Structure Data of Elements and Intermetallic Phases
Author: Eckerlin, P.; Kandler, H.; Stegherr, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/6
Year: 1971
ISBN: 3-540-05500-2
ISBN: 978-3-540-05500-6
Internet Resource: DOI:10.1007/b19971
RefComment: XXVIII, 1019 pages. Hardcover
Abstract: Compiled are the space groups and the lattice constants with their dependance on temperature and pressure for elements and intermetallic phases.
III/7c2
Short: III/7c2
Title: Crystal Structure Data of Inorganic Compounds: Key Elements: P, As, Sb, Bi
Author: Pies, W.; Weiss, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/7c2
Page: 1-452
Year: 1979
ISBN: 3-540-09039-8
ISBN: 978-3-540-09039-7
Internet Resource: DOI:10.1007/b19976
RefComment: 14 figs., XXVII, Hardcover
Abstract: Volume III/7 contains structure data on those compounds which contain at least one of the elements F, Cl, Br, I, O, N, and P and cannot be called "organic". The structure data of the remaining inorganic compounds and the elements are dealt with in volumes III/6 and III/14, while the organic compounds are treated in volumes III/5 and III/10. The systematic arrange-ment is based on the anions ordered according to "key elements", since this system allows the arrangement of the crystal structure data in such a way that both chemical and crystallographical relationships can be recognized. Structure data are compiled as completely as possible for all inorganic substances, where crystal structures have been examined by means of X-ray, neutron, and electron diffraction,and for which at least the lattice constants have been determined.
IV/19A3
Short: IV/19A3
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 3: Compounds from CoCl3 to Ge3N4
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A3
Year: 2000
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-66796-2
ISBN: 978-3-540-66796-4
Internet Resource: DOI:10.1007/b60167
RefComment: 1636 figs., LVII, 409 pages, with CD-ROM, Hardcover
IV/4
Short: IV/4
Title: High-Pressure Properties of Matter
Author: Beggerow, G.
Editor: Schäfer, Kl.
Source: Landolt-Börnstein, New Series
Volume: IV/4
Year: 1980
ISBN: 3-540-09370-2
ISBN: 978-3-540-09370-1
Internet Resource: DOI:10.1007/b90280
RefComment: 589 figs., VIII, 427 pages. Hardcover
Abstract: The main topics are pressure dependences of phase equilibria, compressibility, thermal and caloric properties, transport phenomena, static and magnetic properties, optical phenomena, kinetic phenomena, and systems in the neighbourhood and above the critical area.
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

  File created on 2009/18/08 by LCI Publisher GmbH (Gaja Peters, Inga Thede, Volkmar Vill, Ron Zenczykowski)
  © 2009   Landolt Börnstein,   Springer-Verlag Berlin Heidelberg