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Aluminum nitride (AlN)

Compound Descriptions:

Structure Drawing
Formula:AlN
Element System:Al-N
Element Names:Nitrogen, Aluminium
Molecular Weight:40.988 g/mol
Name(s):Aluminum nitride
AlN
Aluminium Mononitride
Aluminum nitride (AlN)
21RAlN
A 100S
A 100WR
A 200
A 200 (nitride)
A 500FXWR
AGN 1
AGN 1 (nitride)
AGN 2
AGN 2 (nitride)
Aluminum mononitride
AS 10
AS 10 (nitride)
HR 10
MAN 10
MAN 2
Pyrofine A 4
Sheiparu SH 15
Toyalnite FS
Toyalnite UC
XUS 35548
aluminium nitride
aluminium (III) nitride
Aluminiumnitrid
CAS-RN:24304-00-5, 1302-38-1, 11132-80-2, 12252-59-4, 37342-40-8, 165390-88-5
EINECS:246-140-8 EINECS
Classification:no charge; 1fragment

European Regulations

1 matching entries in european regulations: ECHA-pre

Derivatives / Analogues

Analogueother metal: BiN 

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

 Binary nitrides and their solid solutions: Vol. III/7C1 VI.1.5.1:99III/7c1

Electrical Properties

 General data of piezoelectric substances: General data on crystals, ceramics and polymers: Vol. III/29b 3.2. p.15III/29b
 Dielectric constants of piezoelectric substances: Tables of relative dielectric constants (numeric): Vol. III/29b 3.3.6. p.50III/29b
 Piezoelectric constants: Tables of piezoelectric constants: Vol. III/29b 3.5.5. p.109III/29b
 Nonlinear dielectric susceptibility: Hexagonal: Vol. III/30b 6.5.2.1. p.40III/30B
 Nonlinear dielectric susceptibility: Data on crystals (alphabetically ordered substance names): Vol. III/30b 6.7. p.69III/30B

Electronic Properties

 Band structure and core levels of tetrahedrally-bonded semiconductors: AlN: Vol. III/23a 2.1.10. p.36III/23a

Semiconductors

 lattice parameters: Vol. III/41A1A 101III/41A1a
 phonon dispersion curves, density of state: Vol. III/41A1A 12III/41A1a
 piezoelectric constants, electromechanical coupling factor: Vol. III/41A1A 136III/41A1a
 Grüneisen parameters, phonon line width and shift: Vol. III/41A1A 146III/41A1a
 bulk modulus, Young's and shear modulus: Vol. III/41A1A 175III/41A1a
 specific heat, thermal conductivity: Vol. III/41A1A 178III/41A1a
 dielectric constants: Vol. III/41A1A 182III/41A1a
 phase diagram, equation of state, phase transition parameters: Vol. III/41A1A 204III/41A1a
 phonon spectra, phonon wavenumbers: Vol. III/41A1A 225III/41A1a
 structure: Vol. III/41A1A 236III/41A1a
 sound velocities, elastic moduli: Vol. III/41A1A 24III/41A1a
 phonon eigenvectors, mean square displacements: Vol. III/41A1A 247III/41A1a
 thermal expansion: Vol. III/41A1A 251III/41A1a
 second- and third-order susceptibilities: Vol. III/41A1A 265III/41A1a
 thermodynamical parameters, vaporization: Vol. III/41A1A 302III/41A1a
 phonon dispersion and wavenumbers, Grüneisen parameters, eff. charge: Vol. III/41A1A 310III/41A1a
 interband trans. energies, def. potentials, crystal field, spin-orbit splitting: Vol. III/41A1A 381III/41A1a
 effective masses, valence band parameters: Vol. III/41A1A 429III/41A1a
 crystal structure, lattice parameters, thermal expansion: Vol. III/41A1A 467III/41A1a
 third-order elastic constants: Vol. III/41A1A 5III/41A1a
 optical properties, dielectric constants, refractive index: Vol. III/41A1A 501III/41A1a
 internal strain, effective charges, spontaneous polarization: Vol. III/41A1A 55III/41A1a
 energy gap: Vol. III/41A1A 562III/41A1a
 energies of symmetry points of the band structure, critical point energies: Vol. III/41A1A 563III/41A1a
 hole mobility, piezoelectric strain coefficients: Vol. III/41A1A 594III/41A1a
 elastic moduli, bulk modulus: Vol. III/41A1A 618III/41A1a
 electrical and thermal conductivity: Vol. III/41A1A 778III/41A1a
 band structure: Vol. III/41A1A 800III/41A1a
 effective masses, valence band parameters of the zincblende modification: Vol. III/41A1A 839III/41A1a
 Debye temperature, density, hardness, melting point: Vol. III/41A1A 849III/41A1a
 impurities and defects: Vol. III/41A2A 1047III/41A2a

Structure and Molecular Constants

 Theoretical Structures of Molecules: Vol. II/22a 2:7II/22a

Thermodynamic Properties

 Thermodynamic Properties of Compounds, AlF2(OH) to Al2C2: Vol. IV/19a1 p.191IV/19A1

References

II/22a
Short: II/22a
Title: Theoretical Structures of Molecules: Multiple Bonds
Author: Hampel, F.
Editor: von Ragué Schleyer, P.
Source: Landolt-Börnstein, New Series
Volume: II/22a
Year: 1993
ISBN: 3-540-56331-8
ISBN: 978-3-540-56331-0
Internet Resource: DOI:10.1007/b48045
RefComment: VIII, 193 pages. Hardcover
Abstract: Volume II/22 presents computed geometries. Quantum chemical computations provide an excellent alternative to experimental methods for the determination of accurate structures of polyatomic molecules. The objective is not to duplicate, but rather to complement the existing literature. An advantage of computational chemistry over experimental methods is the possi-bility to obtain reliable geometries of molecules, even of important systems, which are difficult to synthesize, isolate, and to study experimentally.
III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30B
Short: III/30B
Title: High Frequency Properties of Dielectric Crystals: Nonlinear Dielectric Susceptibilities
Author: Gurzadyan, G.G.; Charra, F.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30B
Year: 2000
Keyword: Dielectric Crystals; High Frequency Properties; Nonlinear Dielectric Susceptibilities
ISBN: 3-540-65567-0
ISBN: 978-3-540-65567-1
Internet Resource: DOI:10.1007/b52841
RefComment: 172 figs., VIII, 485 pages, with CD-ROM, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contains the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. While the first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices, the present subvolume 30 B covers second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A, B are included.
III/41A1a
Short: III/41A1a
Title: Semiconductors: Group IV Elements, IV-IV and III-V Compounds. Part α - Lattice Properties
Author: Rössler, U.; Strauch, D.
Source: Landolt-Börnstein, New Series
Volume: III/41A1α
Year: 2001
Keyword: Group IV elements; III-V compounds; Lattice parameters; Phase transitions; Phonons; Semiconductors; Structure; dielectric constants; dielectric susceptibilities; elastic constants
ISBN: 3-540-64070-3
ISBN: 978-3-540-64070-7
Internet Resource: DOI:10.1007/b60136
RefComment: 403 figs., XVI, 683 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Volumes III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview of semiconductor data, all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22. Each subvolume includes a CD-ROM containing a complete, revised and updated edition of all relevant data.
III/41A2a
Short: III/41A2a
Title: Semiconductors: Impurities and Defects in Group IV Elements (Part α)
Author: Ammerlaan, C.A.J.; Bracht, H.; Haller, E.E.; Murray, R.; Newman, R.C.; Sauer, R.; Stolwijk, N.A.; Weber, J.; Zulehner, W.
Source: Landolt-Börnstein, New Series
Volume: III/41A2α
Year: 2002
Keyword: Group IV elements; defects; impurities; microdefects; paramagnetic centers semiconductors; semiconductors
ISBN: 3-540-67979-0
ISBN: 978-3-540-67979-0
Internet Resource: DOI:10.1007/b71128
RefComment: 120 figs., XVIII, 401 pages, with CD-ROM, Hardcover
RefComment: Written for scientists, engineers, researchers and developers in the field of semiconductors
Abstract: Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data.
III/7c1
Short: III/7c1
Title: Crystal Structure Data of Inorganic Compounds: Key Element: N
Author: Pies, W.; Weiss, A.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/7c1
Page: 1-260
Year: 1978
ISBN: 3-540-08674-9
ISBN: 978-3-540-08674-1
Internet Resource: DOI:10.1007/b19975
RefComment: 35 figs., XXV, Hardcover
Abstract: Volume III/7 contains structure data on those compounds which contain at least one of the elements F, Cl, Br, I, O, N, and P and cannot be called "organic". The structure data of the remaining inorganic compounds and the elements are dealt with in volumes III/6 and III/14, while the organic compounds are treated in volumes III/5 and III/10. The systematic arrange-ment is based on the anions ordered according to "key elements", since this system allows the arrangement of the crystal structure data in such a way that both chemical and crystallographical relationships can be recognized. Structure data are compiled as completely as possible for all inorganic substances, where crystal structures have been examined by means of X-ray, neutron, and electron diffraction,and for which at least the lattice constants have been determined.
IV/19A1
Short: IV/19A1
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 1: Elements and Compounds from AgBr to Ba3N2
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A1
Year: 1999
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-64734-1
ISBN: 978-3-540-64734-8
Internet Resource: DOI:10.1007/b68802
RefComment: LVII, 405 pages, with CD-ROM, Hardcover
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

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