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Zinc sulfide (ZnS) (SZn)

Compound Descriptions:

Structure Drawing
Formula:SZn
Element System:S-Zn
Element Names:Sulfur, Zinc
Molecular Weight:97.474 g/mol
Name(s):Zinc sulfide (ZnS)
Zinksulfid
Zinc Sulphide
SZn
Albalith
C.I. Pigment White 7
Cleartran
HD-S
Irtran 2
KV 1
KV 2
Sachtolith
Sachtolith HD-S
Zinc monosulfide
FV 40-1
Sachtolith L
C.I. 77975
C.I. Pigment Black 17
FV 40-1 (sulfide)
Zinc(II) sulfide
zinc (II) sulfide
zinc (II) sulphide
Schwefelzink
CAS-RN:1314-98-3, 37187-67-0, 64334-34-5, 209065-88-3, 714217-01-3
Colour Index (C.I.):77975
EINECS:215-251-3 EINECS
Classification:no charge; 2fragments; ionic

European Regulations

1 matching entries in european regulations: ECHA-pre

Derivatives / Analogues

Analogueother metal: NiS 
Analogueother metal: BeS 
Analogueother chalcogen: ZnO 
Analogueother chalcogen: Zinkselenid 
Analogueother chalcogen: Zinktellurid 
Analogueother metal: barium sulfide 
Analogueother metal: Calciumsulfid 
Analogueother metal: Cadmiumsulfid 
Analogueother metal: copper sulfide 
Analogueother metal: Europium sulfide 
Analogueother metal: germanium monosulfide 
Analogueother metal: Quecksilber(II)-sulfid 
Analogueother metal: magnesium sulphide 
Analogueother metal: Mangansulfid 
Analogueother metal: lead monosulfide 
Analogueother metal: PtS 
Analogueother metal: Strontium sulfide 

Landolt-Börnstein Citations:

Crystallography, Structure and Morphology

 bulk structure and bulk lattice parameter(s): Vol. III/24c 1.6, p.26III/24C
 bulk structure and bulk lattice parameter(s): Vol. III/24d 1.6, p.26III/24D
 bulk density of states: Vol. III/24d 8.2.2.2.2, p.263III/24D
 bulk structure and bulk lattice parameter(s): Vol. III/24a 1.6, p.26III/24a
 bulk structure and bulk lattice parameter(s): Vol. III/24b 1.6, p.26III/24b
 Figures: Figs. 161 - 216: Vol. III/14b1 3, p.438III/14b1
 Figures: Figs. 1 - 82: Vol. III/14b1 3, p.410III/14b1
 Figures: Figs. 83 - 160: Vol. III/14b1 3, p.423III/14b1
 Tables: PaS - TeZr: SU - SbSeTl: Vol. III/14b2 2.2, p.384III/14b2
 Figures: Figs. 277 - 340: Vol. III/14b2 3, p.442III/14b2

Electrical Properties

 General data of piezoelectric substances: General data on crystals, ceramics and polymers: Vol. III/29b 3.2. p.41III/29b
 Piezooptic, elastooptic, rotooptic coefficients: Cubic system: Classes (-4)3m (T{d}), 432 (O), m3m (O{h}): Vol. III/30a 5.2.2.1. p.47III/30A
 Piezooptic, elastooptic, rotooptic coefficients: Figures: Vol. III/30a 5.2.4. p.125III/30A
 Linear and quadratic electrooptic coefficients: Tables of linear electrooptic coefficients: Vol. III/30a 5.3.2.1. p.172III/30A
 Index of refraction: Temperature coefficients of indices of refraction: Vol. III/30a 5.3.5.2.2. p.281III/30A
 Linear and quadratic electrooptic coefficients: Temperature coefficients of the linear electrooptic coefficients r: Vol. III/30a 5.3.5.1.2. p.280III/30A

Electronic Properties

 Band structure and core levels of tetrahedrally-bonded semiconductors: ZnS: Vol. III/23a 2.1.22. p.77-80III/23a

Semiconductors

 exciton energies, hexagonal modification: Vol. III/41B 1241III/41B
 crystal structure, modifications: Vol. III/41B 1243III/41B
 melting point: Vol. III/41B 1257III/41B
 plasmon energy of valence band electrons: Vol. III/41B 1265III/41B
 impurities in ZnS: copper: Vol. III/41B 1267III/41B
 impurities in ZnS: chromium: Vol. III/41B 1278III/41B
 emission energies (maxima of emission bands) of impurity-related transitions .: Vol. III/41B 1289III/41B
 lattice parameter, polytypic ZnS and other modifications: Vol. III/41B 1293III/41B
 impurities in ZnS: iron: Vol. III/41B 1294III/41B
 impurities in ZnS: further associated defects: Vol. III/41B 1306III/41B
 phonon wavenumbers, hexagonal modification: Vol. III/41B 1326III/41B
 energy gap, hexagonal modification: Vol. III/41B 1331III/41B
 ionization energies of deep impurities (further data prior to 1980): Vol. III/41B 1339III/41B
 deep impurity inner transition energies: Vol. III/41B 1349III/41B
 impurities in ZnS: titanium: Vol. III/41B 1359III/41B
 vapor pressure, heat of vaporization: Vol. III/41B 1360III/41B
 exciton energies, cubic modification: Vol. III/41B 1362III/41B
 property: Zeeman behavior of impurity transitions: Vol. III/41B 1364III/41B
 impurities in ZnS: other substitutional impurities: Vol. III/41B 1367III/41B
 thermal conductivity: Vol. III/41B 1376III/41B
 energy efficiency of cathodoluminescence: Vol. III/41B 1381III/41B
 thermal expansion: Vol. III/41B 1397III/41B
 thermodynamical parameters: Vol. III/41B 1398III/41B
 nonlinear optical coefficients: Vol. III/41B 1400III/41B
 elastooptical and piezooptical constants: Vol. III/41B 1415III/41B
 dielectric constant, hexagonal modification: Vol. III/41B 1424III/41B
 hardness, density: Vol. III/41B 1437III/41B
 impurities in ZnS: associates: Vol. III/41B 1439III/41B
 elastic moduli, hexagonal modification: Vol. III/41B 1444III/41B
 optical properties: Vol. III/41B 1447III/41B
 dielectric constant, cubic modification: Vol. III/41B 1452III/41B
 photodielectric effect: Vol. III/41B 1455III/41B
 absorption and reflection in the uv and ir regions: Vol. III/41B 1456III/41B
 compressibility, effective charges: Vol. III/41B 1457III/41B
 transformation temperature and pressure: Vol. III/41B 1462III/41B
 impurities in ZnS: nickel: Vol. III/41B 1482III/41B
 third-order elastic constants, Young's modulus, Poisson's ratio, Grüneisen parameters .: Vol. III/41B 1485III/41B
 third order elastooptical constants: Vol. III/41B 1490III/41B
 sound velocities: Vol. III/41B 1507III/41B
 heat capacity: Vol. III/41B 1519III/41B
 visible luminescence of ZnS: Vol. III/41B 1525III/41B
 shallow donors, ionization energies and g-values: Vol. III/41B 1536III/41B
 energy gap, cubic modification: Vol. III/41B 1544III/41B
 bulk modulus: Vol. III/41B 1571III/41B
 internal strain, piezoelectric strain and stress constants: Vol. III/41B 1581III/41B
 Fröhlich and exciton-phonon coupling constants cubic modification: Vol. III/41B 1583III/41B
 interatomic distances, covalent and ion radii: Vol. III/41B 1589III/41B
 impurities in ZnS: cobalt: Vol. III/41B 1591III/41B
 energy states of imperfections and impurities, general remarks: Vol. III/41B 1595III/41B
 surface optical phonon wavenumber, cubic modification: Vol. III/41B 1605III/41B
 Raman frequencies and wavenumbers: Vol. III/41B 1607III/41B
 electrooptical constants: Vol. III/41B 1609III/41B
 lattice parameter, cubic modification: Vol. III/41B 1610III/41B
 crystal field and spin-orbit splitting, g-factor, hexagonal modification: Vol. III/41B 1614III/41B
 effective masses, Luttinger parameters, hexagonal modification: Vol. III/41B 1617III/41B
 phonon dispersion: Vol. III/41B 1627III/41B
 deformation potential, k-linear term, cubic modification: Vol. III/41B 1654III/41B
 shallow acceptor energies: Vol. III/41B 1681III/41B
 molar weight and volume, isotopic abundances: Vol. III/41B 1686III/41B
 electromechanical coupling coefficients: Vol. III/41B 1687III/41B
 native defects: special defects: Vol. III/41B 1692III/41B
 impurities in ZnS: vanadium: Vol. III/41B 1696III/41B
 crystal field splitting parameter Dq and Racah parameter B of 3d impurities: Vol. III/41B 1700III/41B
 isotope shift effects of impurity transitions: Vol. III/41B 1705III/41B
 energy and capture cross section of traps possibly due to acceptors and donors: Vol. III/41B 1706III/41B
 electronic polarizability, ionicity: Vol. III/41B 1720III/41B
 spin-orbit splitting, g-factor, cubic modification: Vol. III/41B 1733III/41B
 refractive index, cubic modification: Vol. III/41B 1735III/41B
 quantum efficiencies and decay times of impurity transitions: Vol. III/41B 1736III/41B
 property: impurity (defect) bound excitons: Vol. III/41B 1740III/41B
 Raman and Faraday effects, multi-phonon spectra: Vol. III/41B 1744III/41B
 phonon wavenumbers, mean square displacements, cubic modification: Vol. III/41B 1746III/41B
 refractive index, polycrystalline ZnS: Vol. III/41B 1754III/41B
 elastic moduli, cubic modification: Vol. III/41B 1756III/41B
 elastic compliances, hexagonal modification: Vol. III/41B 1758III/41B
 Debye temperature: Vol. III/41B 1781III/41B
 pressure coefficients of impurity transitions: Vol. III/41B 1784III/41B
 lattice parameter, hexagonal modification: Vol. III/41B 1791III/41B
 elastic compliances, cubic modification: Vol. III/41B 1795III/41B
 exciton and electron-hole liquid binding energies, cubic modification: Vol. III/41B 1796III/41B
 band structure, cubic modification: Vol. III/41B 1808III/41B
 (photo)conductivity, resistivity, cubic modification: Vol. III/41B 1811III/41B
 refractive index, hexagonal modification: Vol. III/41B 1832III/41B
 effective charges: Vol. III/41B 1835III/41B
 ionization energies of deep impurities: Vol. III/41B 1842III/41B
 native defects: general: Vol. III/41B 1847III/41B
 photoelectric threshold, work function: Vol. III/41B 1851III/41B
 elastic moduli, pressure dependence: Vol. III/41B 1857III/41B
 phonon wavenumbers, polytypic ZnS(4H): Vol. III/41B 1863III/41B
 bulk-photovoltaic effect, thin films: Vol. III/41B 1870III/41B
 carrier mobilities, magnetoresistance, diffusion length, cubic modification: Vol. III/41B 1885III/41B
 critical point and interband transition energies, cubic modification: Vol. III/41B 1897III/41B
 effective masses, cubic modification: Vol. III/41B 1904III/41B
 impurities in ZnS: scandium: Vol. III/41B 1923III/41B
 impurities in ZnS: manganese: Vol. III/41B 1929III/41B
 electron yield, electron affinity: Vol. III/41B 1934III/41B
 band structure, hexagonal modification: Vol. III/41B 1941III/41B
 ground state properties of rare-earth ions: Vol. III/41B 1942III/41B
 interband transition energies, hexagonal modification: Vol. III/41B 1968III/41B

Spectroscopic Methods

 Nuclear quadrupole resonance data tables: Aluminum, Sulfur: Vol. III/39 3.2:5-41III/39

Thermodynamic Properties

 Elements and inorganic compounds: NH4Cl - ZnTe: Vol. IV/4 3.2.1:346, p.120IV/4
 Data in diagrams and tables: Organic compounds: Vol. IV/4 7.2.2:1119, p.303IV/4
 Thermodynamic Properties of Compounds, ZnS to ZnTe: Vol. IV/19a4 p.401IV/19A4

References

III/14b1
Short: III/14b1
Title: Structure Data of Elements and Intermetallic Phases: Sulfides, Selenides, Tellurides, Part b1: Ag-Al-Cd-S ... Cu-Te-Yb
Author: Eisenmann, B.; Schäfer, H.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/14b1
Year: 1986
ISBN: 3-540-15411-6
ISBN: 978-3-540-15411-2
Internet Resource: DOI:10.1007/b19991
RefComment: 216 figs., XXIII, 504 pages. Hardcover
III/14b2
Short: III/14b2
Title: Structure Data of Elements and Intermetallic Phases: Sulfides, Selenides, Tellurides, Part b2: Dy-Er-Te ... Te-Zr
Author: Eisenmann, B.; Schäfer, H.
Editor: Hellwege, K.-H.; Hellwege, A.M.
Source: Landolt-Börnstein, New Series
Volume: III/14b2
Year: 1986
ISBN: 3-540-16402-2
ISBN: 978-3-540-16402-9
Internet Resource: DOI:10.1007/b32266
RefComment: 277 figs., XXIII, 492 pages. Hardcover
III/23a
Short: III/23a
Title: Electronic Structure of Solids: Photoemission Spectra and Related Data
Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D.
Editor: Goldmann, A.; Koch, E.-E.
Source: Landolt-Börnstein, New Series
Volume: III/23a
Page: 1-430
Year: 1989
ISBN: 3-540-50042-1
ISBN: 978-3-540-50042-1
Internet Resource: DOI:10.1007/b35974
RefComment: 904 figs., XI, Hardcover
Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
III/24C
Short: III/24C
Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces
Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24C
Year: 1995
ISBN: 3-540-56071-8
ISBN: 978-3-540-56071-5
Internet Resource: DOI:10.1007/b87125
RefComment: 207 figs., XII, 328 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24D
Short: III/24D
Title: Physics of Solid Surfaces: Interaction of Radiation with Surfaces and Electron Tunneling
Author: Bradshaw, A.M.; Chiaradia, P.; Chiarotti, G.; Colella, R.; Hamers, R.J.; Hemmen, R.; Kellogg, G.L.; Ricken, D.; Schedel-Niedrig, Th.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24D
Year: 1996
ISBN: 3-540-56750-X
ISBN: 978-3-540-56750-9
Internet Resource: DOI:10.1007/b51875
RefComment: Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24a
Short: III/24a
Title: Physics of Solid Surfaces: Structure
Author: Chiarotti, G.; Fasolino, A.; Henzler, M.; Nicholas, J.F.; Ranke, W.; Selloni, A.; Shkrebtii, A.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24a
Year: 1993
ISBN: 3-540-56069-6
ISBN: 978-3-540-56069-2
Internet Resource: DOI:10.1007/b41604
RefComment: 148 figs., XI,362 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized, leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/24b
Short: III/24b
Title: Physics of Solid Surfaces: Electronic and Vibrational Properties
Author: Calandra, C.; Chiarotti, G.; Gradmann, U.; Jacobi, K.; Manghi, F.; Maradudin, A.A.; Tong, S.Y.; Wallis, R.F.
Editor: Chiarotti, G.
Source: Landolt-Börnstein, New Series
Volume: III/24b
Year: 1994
ISBN: 3-540-56070-X
ISBN: 978-3-540-56070-8
Internet Resource: DOI:10.1007/b47750
RefComment: 709 figs., XII, 519 pages. Hardcover
Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e. to surfaces atomically clean and well characterized,leaving the more complex field of the contaminated surfaces and overlayers to a later occasion.
III/29b
Short: III/29b
Title: Low Frequency Properties of Dielectric Crystals: Piezoelectric, Pyroelectric, and Related Constants
Author: Bhalla, A.S.; Cook, W.R.; Liu, S.T.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/29b
Year: 1993
ISBN: 3-540-55065-8
ISBN: 978-3-540-55065-5
Internet Resource: DOI:10.1007/b44419
RefComment: 446 figs., XI, 543 pages. Hardcover
Abstract: Some years after the publication of Vol. III/11 and its supplement III/18 dealing with elastic, piezoelectric, pyroelectric and optical properties of crystals, a complete recompilation of the data of these volumes and of new data was performed. Because of the growth of this subject matter it was found convenient to divide the material into four volumes, III/29a and b for the low frequency properties and III/30a and b for high frequency propertiesof dielectric crystals. The present second subvolume III/29b essentially contains relative dielectric constants and piezoelectric constants and their temperature coefficients, as well as electrostrictive and pyroelectric coefficients and electromechanical coupling factors of dielectric crystals.
III/30A
Short: III/30A
Title: High Frequency Properties of Dielectric Crystals: Piezooptic and Electrooptic Constants
Author: Cook, W.R.; Nelson, D.F.; Vedam, K.
Editor: Nelson, D.F.
Source: Landolt-Börnstein, New Series
Volume: III/30A
Year: 1996
Keyword: Dielectric Crystals; High Frequency Properties; Piezooptic and Electrooptic
ISBN: 3-540-54412-7
ISBN: 978-3-540-54412-8
Internet Resource: DOI:10.1007/b44186
RefComment: 411 figs., XII, 497 pages, Hardcover
Abstract: While vols. III/29 A, B (published in 1992 and 1993, respectively) contain the low frequency properties of dielectric crystals, in vol. III/30 the high frequency or optical properties are compiled. The present and first subvolume 30 A contains piezooptic and elastooptic constants, linear and quadratic electrooptic constants and their temperature coefficients, and relevant refractive indices. Subvolume 30 B will cover second and third order nonlinear optical susceptibilities. For the reader's convenience an alphabetical formula index and an alphabetical index of chemical, mineralogical and technical names for all substances of volumes 29 A, B and 30 A are included.
III/39
Short: III/39
Title: Nuclear Quadrupole Resonance Spectroscopy Data
Author: Chihara, H.; Nakamura, N.
Editor: Chihara, H.
Source: Landolt-Börnstein, New Series
Volume: III/39
Year: 1997
Keyword: NQR; spectroscopy
ISBN: 3-540-62428-7
ISBN: 978-3-540-62428-8
Internet Resource: DOI:10.1007/b61951
RefComment: VIII, 424 pages. Hardcover
Abstract: Volume III/39 continues the compilation of nuclear quadrupole resonance spectroscopy data of solid substances which started in with volumes III/20 and III/31. The literature from the beginning of nuclear quadrupole resonance spectroscopy in 1951 to 1996 is covered. In total there are more than 10.000 substances in the volumes, showing the scope and significance of nuclear quadrupole resonance spectroscopy up to recent times. Volume III/39 can be consulted without recourse to its predecessor because the complete introduction and general tables are repeated from III/20 and III/31.
III/41B
Short: III/41B
Title: Semiconductors: II-VI and I-VII Compounds; Semimagnetic Compounds
Author: Blachnik, R.; Chu, J.; Galazka, R.R.; Geurts, J.; Gutowski, J.; Hönerlage, B.; Hofmann, D.; Kossut, J.; Lévy, R.; Michler, P.; Neukirch, U.; Story, T.; Strauch, D.; Waag, A.
Editor: Rössler, U.
Source: Landolt-Börnstein, New Series
Volume: III/41B
Year: 1999
ISBN: 3-540-64964-6
ISBN: 978-3-540-64964-9
Internet Resource: DOI:10.1007/b71137
RefComment: 630 figs., XXVI, 621 pages, with CD-ROM, Hardcover
Abstract: Vols. III/17a-i and III/22a, b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements and III-V, II-VI and I-VII compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of todays scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of five subvolumes covers only the supplementary data to volumes III/17 and 22.
IV/19A4
Short: IV/19A4
Title: Thermodynamic Properties of Inorganic Materials: Pure Substances. Part 4: Compounds from HgH to ZnTe
Author: Scientific Group Thermodata Europe
Editor: Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule Aachen
Source: Landolt-Börnstein, New Series
Volume: IV/19A4
Year: 2001
Keyword: Heat Capacities; Enthalpies; Entropies; Gibbs Energies; Phase Transition Data
ISBN: 3-540-41025-2
ISBN: 978-3-540-41025-6
Internet Resource: DOI:10.1007/b71435
RefComment: 1660 figs., LVII, 415 pages, with CD-ROM, Hardcover
IV/4
Short: IV/4
Title: High-Pressure Properties of Matter
Author: Beggerow, G.
Editor: Schäfer, Kl.
Source: Landolt-Börnstein, New Series
Volume: IV/4
Year: 1980
ISBN: 3-540-09370-2
ISBN: 978-3-540-09370-1
Internet Resource: DOI:10.1007/b90280
RefComment: 589 figs., VIII, 427 pages. Hardcover
Abstract: The main topics are pressure dependences of phase equilibria, compressibility, thermal and caloric properties, transport phenomena, static and magnetic properties, optical phenomena, kinetic phenomena, and systems in the neighbourhood and above the critical area.
EINECS
Short: EINECS
Title: EINECS (European Inventory of Existing Commercial Chemical Substances)
Source: Official Journal of the European Communities
Volume: C 146 A (15.06.1990)
Page: 1
Year: 1990
Publish_Date: 1990/06/15

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  © 2009   Landolt Börnstein,   Springer-Verlag Berlin Heidelberg


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